The ideal leaking electrical diode is built in bondgraphic technology from a bond graph D2 element, a 1-junction, and three bonds. A-causal bonds must be used here, because the causality depends on the embedding of the diode in its environment. A leaking diode has been used to ensure that the diode will not lead to a division by zero in either switch position, irrespective of the circuit topology.
Parameters:
Ron: Leakage resistance in on state (default value = 1e-5 Ohm)
Goff: Leakage conductance in off state (default value = 1e-5 Mho)
Vknee: Forward threshold voltage (default = 0 Volt)
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.BondLib.Electrical.Analog.Ideal.IdealDiode