Ideal leaking tunnel diode of analog electrical library
The ideal leaking electrical tunnel diode is built in bondgraphic technology from a bond graph T2 element, a 1-junction, and three bonds. A-causal bonds must be used here, because the causality depends on the embedding of the diode in its environment. A leaking diode has been used to ensure that the diode will not lead to a division by zero in either switch position, irrespective of the circuit topology.
Parameters:
G0: Leakage conductance in blocking state (default value = 1e-5 Mho)
R1: Leakage resistance in first conducting state (default value = 1e-5 Ohm)
R2: Leakage resistance in second conducting state (default value = 1e-5 Ohm)
R3: Leakage resistance in final conducting state (default value = 1e-5 Ohm)
em1: First knee voltage (default value = 1 Volt)
em2: Second knee voltage (default value = 2 Volt)
em3: Third knee voltage (default value = 3 Volt)
e0: Fourth knee voltage (default value = 4 Volt)
fm: Bottom intermediate current (default value = 1 Amp)
f0: Top intermediate current (default value = 2 Amp)
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.BondLib.Electrical.Analog.Ideal.IdealTunnelDiode