.BondLib.Electrical.Analog.Semiconductors.NPN

Information

The NPN element of the analog electrical library built on bond graph technology implements the Ebers-Moll model of a NPN bipolar transistor. The substrate is not shown on the icon layer, as it is assumed grounded. The transistor is assumed to be vertically diffused, as the substrate is connected to the collector, rather than to the base.

Parameters:

 Bf:    Forward beta coefficient (default value = 50)

 Br:    Reverse beta coefficient (default value = 0.1)

 Is:    Transport saturation current (default value = 1e-16 Amp)

 Vak:   Inverse early voltage (default value = 0.02 /Volt)

 Tauf:  Ideal forward transit time (default value = 0.12e-9 sec)

 Taur:  Ideal reverse transit time (default value = 5e-9 sec)

 Ccs:   Collector-substrate capacitance (default value = 1e-12 F)

 Cje:   Base-emitter zero bias depletion capacitance (default value = 0.4e-12 F)

 Cjc:   Base-collector zero bias depletion capacitance (default value = 0.5e-12 F)

 Phie:  Base-emitter diffusion voltage (default value = 0.8 Volt)

 Me:    Base-emitter gradation exponent (default value = 0.4)

 Phic:  Base-collector diffusion voltage (default value = 0.8 Volt)

 Mc:    Base-collector gradation exponent (default value = 0.333)

 Gbc:   Base-collector leakage conductance (default value = 1e-15 Mho)

 Gbe:   Base-emitter leakage conductance (default value = 1e-15 Mho)

 Vt:    Thermal voltage (default value = 0.02585 Volt)

 EMin:  Minimum exponent (default value = -100)

 EMax:  Maximum exponent (default value = 40)

References:

Vlach, J. and K. Singal (1983), Computer methods for circuit analysis and design, Van Nostrand Reinhold, New York, on page 317 ff.

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