.BondLib.Electrical.Analog.Semiconductors.Utilities.HeatingJunctionDiode

Information

The heating junction diode is built in bondgraphic technology from a bond graph DjS element, a 1-junction, and three bonds. A-causal bonds must be used here, because the causality depends on the embedding of the diode in its environment.

The junction diode model is a simple diode with an exponential characteristic. The diode formula essentially is:

f = Is*(exp(e/Vt) - 1)

However, if the exponent e/Vt reaches either an upper limit EMax or a lower limit Emin, the diode characterisic is linearly continued to avoid overflow or underflow, respectively.

Parameters:

 Tnom:  Reference temperature (default value = 300.15 K)

 Is:    Transport saturation current (default value = 1e-16 Amp)

 EG:    Energy gap for temperature effect on saturation current (default value = 1.11 Volt)

 N:     Current emission coefficient (default value = 1)

 XTI:   Saturation current temperature exponent (default value = 3)

 EMin:  Minimum exponent (default value = -100)

 EMax:  Maximum exponent (default value = 40)

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