modelD
Spice-style diode of the analog electrical library
Extends from Interfaces.SpiceTwoPort (TwoPort interface for Spice-style models).
Information
The Spice-style diode offers three modeling levels [1]. The Level=1 model characterizes a junction diode by its electrical properties. This model is similar to the models of the junction diodes used within the BJT and MOSFET models, but it is more accurate. In particular, it includes a description of avalanche breakdown behavior. The Level=3 model is similar to the Level=1 model, but here, the diode is characterized by its physical parameters, such as length and width of the junction. Also, this model is yet more accurate as it allows the modeler to specify a polysilicon and a metal layer, in which case the additional capacitances associated with these layers will be computed as well. The Level=2 model is an entirely different device. It represents essentially a non-linear resistor with a quadratic characteristic on both sides. Thus, the Fowler-Nordheim diode is a symmetric device.The heating port may remain unconnected, in which case the device is being simulated at a constant temperature of Tnom.
Parameters:
Tnom: Reference temperature (default value = 300.15 K) Levels 1-3
Level: DIODE modeling level (default value = 1)
Level=1: Non-geometric junction diode
Level=2: Fowler-Nordheim diode
Level=3: Geometric junction diode
Area: Relative area occupied by the diode (default value = 1) Level 1
Process Parameters:
TOX: Thin oxide thickness (default value = 1e-7 m) Levels 1-3
Basic Electrical Parameters:
PB: Built-in junction potential at reference temperature (default value = 0.8 Volt) Levels 1,3
BV: Reverse breakdown voltage at reference temperature (default value = 0 Volt) Levels 1,3
BV must be specified as a positive number. A value of 0 indicates that the breakdown voltage is infinite.
IBV: Reverse breakdown current (default value = 0 Amp) Levels 1,3
IBV must be specified as a positive number. A value of 0 indicates that the breakdown voltage is infinite.
Either BV or IBV (the diodic current at breakdown) can be specified. If both are specified and
the values are inconsistent with each other, they will be suitably adjusted to match.
PHP: Built-in perimeter potential at reference temperature (default value = 0.8 Volt) Levels 1,3
N: Current emission coefficient (default value = 1) Levels 1,3
IS: Saturation current at reference temperature (default value = 1e-14 Amp) Level 1
ISW: Saturation current of perimeter at reference temperature (default value = 0 Amp) Level 1
PJ: Relative perimeter width (default value = 1) Level 1
High Current Beta Degradation Effect Parameters:
IKF: Forward knee current (default value = ∞ Amp) Levels 1,3
IKR: Reverse knee current (default value = ∞ Amp) Levels 1,3
Parasitic Resistor Parameters:
RS: Resistance at reference temperature (default value = 0 Ohm) Levels 1-3
Junction Capacitance Parameters:
CJ: Zero-bias bulk capacitance at reference temperature (default value = 0.5e-12 F) Level 1
MJ: Bulk junction grading coefficient (default value = 0.33) Levels 1,3
CJSW: Zero-bias perimeter capacitance at reference temperature (default value = 0.5e-12 F) Level 1
MJSW: Perimeter capacitance grading coefficient (default value = 0.33) Levels 1,3
FC: Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1,3
Transit Time Parameters:
TT: Transit time at reference temperature (default value = 0 sec) Levels 1,3
Temperature Compensation Parameters:
TRS: Linear temperature coefficient of resistance (default value = 0 1/K) Levels 1-3
TCV: Linear temperature coefficient of breakdown voltage (default value = 0 V/K) Levels 1,3
TTT1: Linear temperature coefficient of transit time (default value = 0 1/K) Levels 1,3
TTT2: Quadratic temperature coefficient of transit time (default value = 0 1/K2) Levels 1,3
XTI: Temperature exponent of saturation current (default value = 3) Levels 1,3
XTI = 3 for pn-junction
XTI = 2 for Schottky barrier diode
EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 1,3
EG = 1.11 for Si
EG = 0.73 for Schottky barrier diode
EG = 0.71 for Ge
Level=2 General Parameters:
M: Diode multiplier (default value = 1) Levels 2,3
Level=2 Geometric Parameters:
L: Diode length (default value = 0 m) Levels 2,3
W: Diode width (default value = 0 m) Levels 2,3
Level=2 Electrical Parameters:
JF: Forward Fowler-Nordheim current coefficient (default value = 0 A/V2) Level 2
JR: Reverse Fowler-Nordheim current coefficient (default value = 0 A/V2) Level 2
EF: Forward Fowler-Nordheim critical electrical field (default value = 0 V/m) Level 2
ER: Reverse Fowler-Nordheim critical electrical field (default value = 0 V/m) Level 2
Level=3 Geometric Parameters:
LP: Polysilicon length (default value = 0 m) Level 3
WP: Polysilicon width (default value = 0 m) Level 3
XP: Widening of polysilicon due to masking and etching (default value = 0 m) Level 3
XOI: Polysilicon thickness (default value = 0 m) Level 3
LM: Metal length (default value = 0 m) Level 3
WM: Metal width (default value = 0 m) Level 3
XM: Widening of metal due to masking and etching (default value = 0 m) Level 3
XOM: Metal thickness (default value = 0 m) Level 3
Level=3 Electrical Parameters:
JS: Saturation current density at reference temperature (default value = 1e-4 Amp/m2) Level 3
JSW: Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2) Level 3
Level=3 Junction Capacitance Parameters:
CJ2: Zero-bias bulk capacitance per meter square at reference temperature (default value = 1e-4 F/m2) Level 3
CJSW2: Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) Level 3
Numerical Parameters:
EMin: if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1,3
EMax: if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1,3
GminDC: Leakage conductance (default value = 1e-16 mho) Levels 1,3
Compiler Parameters:
enforceStates: State selector (default value = true) Levels 1-3
enforceStates = true: Use (external) capacitive voltages as state variables
enforceStates = false: Use (internal) bond graph efforts as state variables
References:
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.SIunits.Temperature | Tnom (from SpiceTwoPort) | 300.15 | Reference temperature |
| Real | inf | Modelica.Constants.inf | |
| Modelica.SIunits.Entropy | k | Modelica.Constants.k | Boltzmann's constant |
| Modelica.SIunits.ElectricCharge | q | 1.6021892e-19 | Electron charge |
| Types.DIODElevel | Level | 1 | DIODE modeling level |
| Real | Area | 1 | Relative device area |
| Process parameters | |||
| Modelica.SIunits.Length | TOX | 1e-7 | Thin oxide thickness |
| Electrical parameters | |||
| Modelica.SIunits.Voltage | PB | 0.8 | Built-in junction potential at reference temperature |
| Modelica.SIunits.Voltage | BV | 0 | Reverse breakdown voltage at reference temperature |
| Modelica.SIunits.Current | IBV | 0 | Reverse breakdown current |
| Modelica.SIunits.Voltage | PHP | 0.8 | Built-in perimeter potential at reference temperature |
| Real | N | 1 | Current emission coefficient |
| Modelica.SIunits.Current | IS | 1e-14 | Saturation current at reference temperature |
| Modelica.SIunits.Current | ISW | 0 | Saturation current of perimeter at reference temperature |
| Real | PJ | 1 | Relative perimeter width |
| High current beta degradation effect | |||
| Modelica.SIunits.Current | IKF | inf | Forward knee current |
| Modelica.SIunits.Current | IKR | inf | Reverse knee current |
| Parasitic resistor parameters | |||
| Modelica.SIunits.Resistance | RS | 0 | Resistance at reference temperature |
| Junction capacitance parameters | |||
| Modelica.SIunits.Capacitance | CJ | 0.5e-12 | Zero-bias bulk capacitance at reference temperature |
| Real | MJ | 0.33 | Bulk junction grading coefficient |
| Modelica.SIunits.Capacitance | CJSW | 0.5e-12 | Zero-bias perimeter capacitance at reference temperature |
| Real | MJSW | 0.33 | Perimeter capacitance grading coefficient |
| Real | FC | 0.5 | Forward-bias depletion capacitance coefficient |
| Transit time parameters | |||
| Modelica.SIunits.Time | TT | 0 | Transit time at reference temperature |
| Temperature compensation parameters | |||
| Real | TRS | 0 | Linear temperature coefficient of resistance |
| Real | TCV | 0 | Linear temperature coefficient of breakdown voltage |
| Real | TTT1 | 0 | Linear temperature coefficient of transit time |
| Real | TTT2 | 0 | Quadratic temperature coefficient of transit time |
| Types.DIODEtype | XTI | 3 | Saturation current temperature exponent |
| Modelica.SIunits.Voltage | EG | 1.11 | Energy gap at 0K (EG=1.11: Si, EG=0.73: Schottky barrier diode, EG=0.71: Ge) |
| Level=2 | |||
| Integer | M | 1 | Diode multiplier |
| Level=2 › Geometric parameters | |||
| Modelica.SIunits.Length | L | 0 | Diode length |
| Modelica.SIunits.Length | W | 0 | Diode width |
| Level=2 › Electrical parameters | |||
| Real | JF | 0 | Forward Fowler-Nordheim current coefficient |
| Real | JR | 0 | Reverse Fowler-Nordheim current coefficient |
| Modelica.SIunits.ElectricFieldStrength | EF | 0 | Forward Fowler-Nordheim critical electrical field |
| Modelica.SIunits.ElectricFieldStrength | ER | 0 | Reverse Fowler-Nordheim critical electrical field |
| Level=3 › Geometric parameters | |||
| Modelica.SIunits.Length | LP | 0 | Polysilicon length |
| Modelica.SIunits.Length | WP | 0 | Polysilicon width |
| Modelica.SIunits.Length | XP | 0 | Widening of polysilicon due to masking and etching |
| Modelica.SIunits.Length | XOI | 0 | Polysilicon thickness |
| Modelica.SIunits.Length | LM | 0 | Metal length |
| Modelica.SIunits.Length | WM | 0 | Metal width |
| Modelica.SIunits.Length | XM | 0 | Widening of metal due to masking and etching |
| Modelica.SIunits.Length | XOM | 0 | Metal thickness |
| Level=3 › Electrical parameters | |||
| Modelica.SIunits.CurrentDensity | JS | 1e-4 | Saturation current density at reference temperature |
| Real | JSW | 0 | Saturation current density of perimeter at reference temperature |
| Level=3 › Junction capacitance parameters | |||
| Real | CJ2 | 1e-4 | Zero-bias bulk capacitance per square meter at reference temperature |
| Real | CJSW2 | 1e-9 | Zero-bias perimeter capacitance per meter at reference temperature |
| Advanced › Numerical parameters | |||
| Real | EMin | -100 | if x < EMin, the exp(x) function is linearized |
| Real | EMax | 40 | if x > EMax, the exp(x) function is linearized |
| Modelica.SIunits.Conductance | GminDC | 1e-16 | Leakage conductance |
| Advanced › Compiler parameters | |||
| Types.EnforceCapacitor | enforceStates | true | State selector |
Connectors
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.Electrical.Analog.Interfaces.PositivePin | p (from OnePort) | Left electrical connector | |
| Modelica.Electrical.Analog.Interfaces.NegativePin | n (from OnePort) | Right electrical connector | |
| Modelica.Thermal.HeatTransfer.Interfaces.HeatPort_a | heatPort (from SpiceTwoPort) | may remain unconnected |
Components
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.SIunits.Voltage | v (from OnePort) | Voltage drop between the two pins | |
| Modelica.SIunits.Current | i (from OnePort) | Current flowing from pin p to pin n | |
| R | RS1 | ||
| BondLib.Spice.Utilities.ID0 | ID0 | ||
| BondLib.Electrical.Analog.Spice.Utilities.CjD | Dd | ||
| BondLib.Electrical.Analog.Spice.Utilities.Isignal | Id | ||
| BondLib.Electrical.Analog.Sensors.VoltageSensor | vd | ||
| Modelica.Thermal.HeatTransfer.TemperatureSensor | Tdev1 | ||
| Thermal.HeatTransfer.Switches.HeatBranch | Sw1 | ||
| Thermal.HeatTransfer.Sources.FixedTemperature | T_nom |