The heating port may remain unconnected, in which case the device is being simulated at a constant temperature of Tnom.
Parameters:
Level: MOSFET modeling level (default value = 1)
Level=0: Static injection model
Level=1: Shichman-Hodges model
Level=2: Grove-Frohman model
Level=3: Empirical model
Level=4: Simplified Grove-Frohman model
Basic Geometric Parameters:
L: Channel length (default value = 1e-4 m) Levels 0-4
W: Channel width (default value = 1e-4 m) Levels 0-4
Basic Process Parameters:
TPG: Type of gate material (default value = 1) Levels 0-4
TPG = 0: Aluminum gate
TPG = 1: Polysilicon gate
TOX: Thin oxide thickness (default value = 1e-7 m) Levels 0-4
COX: Specific capacitance of SiO2 (default value = 0 F/m2) Levels 0-4
NSUB: Substrate doping (default value = 0 1/m3) Levels 0-4
Basic Electrical Parameters:
U0: Surface mobility at reference temperature (default value = 0 m2/(V*s)) Levels 0-4
VT0: Zero-bias threshold voltage (default value = 0 Volt) Levels 0,1
VT0 > 0 for enhancement MOSFET
VT0 < 0 for depletion MOSFET
LAMBDA: Channel length modulation (default value = 0 1/Volt) Levels 0-4
LD: Lateral diffusion (default value = 0 m) Levels 0-4
WD: Width diffusion (default value = 0 m) Levels 0-4
KP: Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 0-4
GAMMA: Body-effect parameter (default value = 0 Volt0.5) Levels 0-4
PHI: Surface inversion potential at reference temperature (default value = 0 Volt) Levels 0-4
NSS: Surface state density (default value = 0 1/m2) Levels 0-4
Basic Temperature Compensation Parameters:
Tnom: Reference temperature (default value = 300.15 K) Levels 0-4
EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 0-4
Level=1 Electrical Parameters:
AD: Drain diffusion area (default value = 0 m2) Levels 1-4
PD: Drain perimeter width (default value = 0 m) Levels 1-4
AS: Source diffusion area (default value = 0 m2) Levels 1-4
PS: Source perimeter width (default value = 0 m) Levels 1-4
ISD: Drain junction saturation current at reference temperature (default value = 0 Amp) Levels 1-4
ISS: Source junction saturation current at reference temperature (default value = 0 Amp) Levels 1-4
JS: Transport saturation current density (default value = 0 Amp/m2) Levels 1-4
PB: Built-in potential at reference temperature (default value = 0.8 Volt) Levels 1-4
Level=1 Parasitic Resistor Parameters:
RD: Drain Ohmic resistance (default value = 1 Ohm) Levels 1-4
RS: Source Ohmic resistance (default value = 1 Ohm) Levels 1-4
Level=1 Junction Capacitance Parameters:
CJ: Zero-bias bulk capacitance per square meter at reference temperature (default value = 0 F/m2) Levels 1-4
MJ: Bulk junction grading coefficient (default value = 0.33) Levels 1-4
CJSW: Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) Levels 1-4
MJSW: Perimeter capacitance grading coefficient (default value = 0.33) Levels 1-4
FC: Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1-4
CGB0: Gate-bulk overlap capacitance per meter (default value = 0 F/m) Levels 1-4
CGD0: Gate-drain overlap capacitance per meter (default value = 0 F/m) Levels 1-4
CGS0: Gate-source overlap capacitance per meter (default value = 0 F/m) Levels 1-4
Level=1 Temperature Compensation Parameters:
TRD1: Linear temperature coefficient of drain resistance (default value = 0 1/K) Levels 1-4
TRD2: Quadratic temperature coefficient of drain resistance (default value = 0 1/K2) Levels 1-4
TRS1: Linear temperature coefficient of source resistance (default value = 0 1/K) Levels 1-4
TRS2: Quadratic temperature coefficient of source resistance (default value = 0 1/K2) Levels 1-4
Level=2 Process Parameters:
XJ: Metallurgical Junction Depth (default value = 0 m) Levels 2-4
Level=2 Electrical Parameters:
UCRIT: Critical electric field for mobility (default value = 1e6 V/m) Levels 2,4
UEXP: Exponential coefficient for mobility (default value = 0) Levels 2,4
UTRA: Transverse field coefficient (default value = 0) Levels 2,4
ECRIT: Critical electric field for pinch-off (default value = 0 V/m) Levels 2,4
DELTA: Width effect on threshold voltage (default value = 0) Levels 2-4
VMAX: Maximum drift velocity of carriers (default value = 0 m/s) Levels 2-4
VMAX = 0: Frohman-Grove model of drain current computation (Levels 2,4)
VMAX > 0: Baum-Beneking model of drain current computation (Levels 2,4)
NFS: Surface fast state density (default value = 0 1/m2) Levels 2-4
NEFF: Total channel charge coefficient (default value = 1) Levels 2,4
XQC: Coefficient of channel charge share (default value = 0) Levels 2-4
XQC <= 0.5: Ward-Dutton model of gate capacitance computation
XQC > 0.5: Meyer model of gate capacitance computation
Level=3 Electrical Parameters:
KAPPA: Saturation field factor (default value = 0.2) Level 3
ETA: Static feedback on threshold voltage (default value = 0) Level 3
THETA: Mobility modulation (default value = 0 1/Volt) Level 3
Numerical Parameters:
EMin: if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1-4
EMax: if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1-4
GminDC: Leakage conductance (default value = 1e-12 mho) Levels 0-4
Compiler Parameters:
enforceStates: State selector (default value = true) Levels 0-4
enforceStates = true: Use (external) capacitive voltages as state variables
enforceStates = false: Use (internal) bond graph efforts as state variables
References: