modelZ

Spice-style Zener diode of the analog electrical library

Extends from Interfaces.SpiceTwoPort (TwoPort interface for Spice-style models).

Information

The Spice-style Zener diode model has been built from two diodes as a macro model [1]. It offers two modeling levels. The Level=1 model characterizes the internal junction diodes by their electrical properties. The Level=2 model is similar to the Level=1 model, but here, the diodes are characterized by their physical parameters, such as length and width of the junction. Also, this model is yet more accurate as it allows the modeler to specify a polysilicon and a metal layer, in which case the additional capacitances associated with these layers will be computed as well.

The heating port may remain unconnected, in which case the device is being simulated at a constant temperature of Tnom.


Parameters:

 Tnom:    Reference temperature (default value = 300.15 K) Levels 1,2

 Level:   DIODE modeling level (default value = 1)
            Level=1: Non-geometric Zener diode
            Level=2: Geometric Zener diode

 Area:    Relative area occupied by the diode (default value = 1) Level 1


Process Parameters:

 TOX:     Thin oxide thickness (default value = 1e-7 m) Levels 1,2


Basic Electrical Parameters:

 PB:      Built-in junction potential at reference temperature (default value = 0.8 Volt) Levels 1,2

 BV:      Zener breakdown voltage (default value = 10 Volt) Levels 1,2
          BV must be specified as a positive number.

 PHP:     Built-in perimeter potential at reference temperature (default value = 0.8 Volt) Levels 1,2

 V0:      Forward threshold voltage (default value = 0 Volt) Levels 1,2

 N:       Current emission coefficient (default value = 1) Levels 1,2

 IS:      Saturation current at reference temperature (default value = 1e-14 Amp) Level 1

 ISW:     Saturation current of perimeter at reference temperature (default value = 0 Amp) Level 1

 PJ:      Relative perimeter width (default value = 1) Level 1


High Current Beta Degradation Effect Parameters:

 IKF:     Forward knee current (default value = ∞ Amp) Levels 1,2

 IKR:     Reverse knee current (default value = ∞ Amp) Levels 1,2


Parasitic Resistor Parameters:

 RS:      Series resistance at reference temperature (default value = 0 Ohm) Levels 1,2

 RB:      Zener breakdown resistance at reference temperature (default value = 0 Ohm) Levels 1,2


Junction Capacitance Parameters:

 CJ:      Zero-bias bulk capacitance at reference temperature (default value = 0.5e-12 F) Level 1

 MJ:      Bulk junction grading coefficient (default value = 0.33) Levels 1,2

 CJSW:    Zero-bias perimeter capacitance at reference temperature (default value = 0.5e-12 F) Level 1

 MJSW:    Perimeter capacitance grading coefficient (default value = 0.33) Levels 1,2

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1,2


Transit Time Parameters:

 TT:      Transit time at reference temperature (default value = 0 sec) Levels 1,2


Temperature Compensation Parameters:

 TRS:     Linear temperature coefficient of series resistance (default value = 0 1/K) Levels 1,2

 TRB:     Linear temperature coefficient of Zener resistance (default value = 0 1/K) Levels 1,2

 TTT1:    Linear temperature coefficient of transit time (default value = 0 1/K) Levels 1,2

 TTT2:    Quadratic temperature coefficient of transit time (default value = 0 1/K2) Levels 1,2

 XTI:     Temperature exponent of saturation current (default value = 3) Levels 1,2

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 1,2


Level=2 General Parameters:

 M:       Diode multiplier (default value = 1) Level 2


Level=2 Geometric Parameters:

 L:       Diode length (default value = 0 m) Level 2

 W:       Diode width (default value = 0 m) Level 2

 LP:      Polysilicon length (default value = 0 m) Level 2

 WP:      Polysilicon width (default value = 0 m) Level 2

 XP:      Widening of polysilicon due to masking and etching (default value = 0 m) Level 2

 XOI:     Polysilicon thickness (default value = 0 m) Level 2

 LM:      Metal length (default value = 0 m) Level 2

 WM:      Metal width (default value = 0 m) Level 2

 XM:      Widening of metal due to masking and etching (default value = 0 m) Level 2

 XOM:     Metal thickness (default value = 0 m) Level 2


Level=2 Electrical Parameters:

 JS:      Saturation current density at reference temperature (default value = 1e-4 Amp/m2) Level 2

 JSW:     Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2) Level 2


Level=2 Junction Capacitance Parameters:

 CJ2:     Zero-bias bulk capacitance per meter square at reference temperature (default value = 1e-4 F/m2) Level 2

 CJSW2:   Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) Level 2


Initialization Parameters:

 rampTime: Initial ramping time for sources (default value = 0 s) Levels 1,2


Numerical Parameters:

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1,2

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1,2

 GminDC:  Leakage conductance (default value = 1e-16 mho) Levels 1,2


Compiler Parameters:

 enforceStates:  State selector (default value = true) Levels 1,2
                   enforceStates = true:   Use (external) capacitive voltages as state variables
                   enforceStates = false:  Use (internal) bond graph efforts as state variables


References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.18.

Parameters

TypeNameDefaultDescription
Modelica.SIunits.TemperatureTnom (from SpiceTwoPort)300.15Reference temperature
RealinfModelica.Constants.inf
Types.ZENERlevelLevel1Zener diode modeling level
RealArea1Relative device area
Process parameters
Modelica.SIunits.LengthTOX1e-7Thin oxide thickness
Electrical parameters
Modelica.SIunits.VoltagePB0.8Built-in junction potential at reference temperature
Modelica.SIunits.VoltageBV10Reverse Zener breakdown voltage
Modelica.SIunits.VoltagePHP0.8Built-in perimeter potential at reference temperature
Modelica.SIunits.VoltageV00Forward threshold voltage
RealN1Current emission coefficient
Modelica.SIunits.CurrentIS1e-14Saturation current at reference temperature
Modelica.SIunits.CurrentISW0Saturation current of perimeter at reference temperature
RealPJ1Relative perimeter width
High current beta degradation effect
Modelica.SIunits.CurrentIKFinfForward knee current
Modelica.SIunits.CurrentIKRinfReverse knee current
Parasitic resistor parameters
Modelica.SIunits.ResistanceRS0Series resistance at reference temperature
Modelica.SIunits.ResistanceRB0Zener breakdown resistance at reference temperature
Junction capacitance parameters
Modelica.SIunits.CapacitanceCJ0.5e-12Zero-bias bulk capacitance at reference temperature
RealMJ0.33Bulk junction grading coefficient
Modelica.SIunits.CapacitanceCJSW0.5e-12Zero-bias perimeter capacitance at reference temperature
RealMJSW0.33Perimeter capacitance grading coefficient
RealFC0.5Forward-bias depletion capacitance coefficient
Transit time parameters
Modelica.SIunits.TimeTT0Transit time at reference temperature
Temperature compensation parameters
RealTRS0Linear temperature coefficient of series resistance
RealTRB0Linear temperature coefficient of Zener breakdown resistance
RealTTT10Linear temperature coefficient of transit time
RealTTT20Quadratic temperature coefficient of transit time
Types.DIODEtypeXTI3Saturation current temperature exponent
Modelica.SIunits.VoltageEG1.11Energy gap for temperature effect on saturation current at 0 K
Level=2
IntegerM1Diode multiplier
Level=2 › Geometric parameters
Modelica.SIunits.LengthL0Diode length
Modelica.SIunits.LengthW0Diode width
Modelica.SIunits.LengthLP0Polysilicon length
Modelica.SIunits.LengthWP0Polysilicon width
Modelica.SIunits.LengthXP0Widening of polysilicon due to masking and etching
Modelica.SIunits.LengthXOI0Polysilicon thickness
Modelica.SIunits.LengthLM0Metal length
Modelica.SIunits.LengthWM0Metal width
Modelica.SIunits.LengthXM0Widening of metal due to masking and etching
Modelica.SIunits.LengthXOM0Metal thickness
Level=2 › Electrical parameters
Modelica.SIunits.CurrentDensityJS1e-4Saturation current density at reference temperature
RealJSW0Saturation current density of perimeter at reference temperature
Level=2 › Junction capacitance parameters
RealCJ21e-4Zero-bias bulk capacitance per square meter at reference temperature
RealCJSW21e-9Zero-bias perimeter capacitance per meter at reference temperature
Initialization
Modelica.SIunits.TimerampTime0Ramping time for sources
Advanced › Numerical parameters
RealEMin-100if x < EMin, the exp(x) function is linearized
RealEMax40if x > EMax, the exp(x) function is linearized
Modelica.SIunits.ConductanceGminDC1e-16Leakage conductance
Advanced › Compiler parameters
Types.EnforceCapacitorenforceStatestrueState selector

Connectors

TypeNameDefaultDescription
Modelica.Electrical.Analog.Interfaces.PositivePinp (from OnePort)Left electrical connector
Modelica.Electrical.Analog.Interfaces.NegativePinn (from OnePort)Right electrical connector
Modelica.Thermal.HeatTransfer.Interfaces.HeatPort_aheatPort (from SpiceTwoPort)may remain unconnected

Components

TypeNameDefaultDescription
Modelica.SIunits.Voltagev (from OnePort)Voltage drop between the two pins
Modelica.SIunits.Currenti (from OnePort)Current flowing from pin p to pin n
DD1
DD2
RampingSources.VV1
RampingSources.VV2
RR1
Thermal.HeatTransfer.Switches.HeatBranchSw1
Thermal.HeatTransfer.Sources.FixedTemperatureT_nom