.BondLib.Electrical.Analog.Spice.Z

Spice-style Zener diode of the analog electrical library

Information

The Spice-style Zener diode model has been built from two diodes as a macro model [1]. It offers two modeling levels. The Level=1 model characterizes the internal junction diodes by their electrical properties. The Level=2 model is similar to the Level=1 model, but here, the diodes are characterized by their physical parameters, such as length and width of the junction. Also, this model is yet more accurate as it allows the modeler to specify a polysilicon and a metal layer, in which case the additional capacitances associated with these layers will be computed as well.

The heating port may remain unconnected, in which case the device is being simulated at a constant temperature of Tnom. 

Parameters:

 Tnom:    Reference temperature (default value = 300.15 K) Levels 1,2

 Level:   DIODE modeling level (default value = 1)
            Level=1: Non-geometric Zener diode
            Level=2: Geometric Zener diode

 Area:    Relative area occupied by the diode (default value = 1) Level 1


Process Parameters:

 TOX:     Thin oxide thickness (default value = 1e-7 m) Levels 1,2


Basic Electrical Parameters:

 PB:      Built-in junction potential at reference temperature (default value = 0.8 Volt) Levels 1,2

 BV:      Zener breakdown voltage (default value = 10 Volt) Levels 1,2
          BV must be specified as a positive number.

 PHP:     Built-in perimeter potential at reference temperature (default value = 0.8 Volt) Levels 1,2

 V0:      Forward threshold voltage (default value = 0 Volt) Levels 1,2

 N:       Current emission coefficient (default value = 1) Levels 1,2

 IS:      Saturation current at reference temperature (default value = 1e-14 Amp) Level 1

 ISW:     Saturation current of perimeter at reference temperature (default value = 0 Amp) Level 1

 PJ:      Relative perimeter width (default value = 1) Level 1


High Current Beta Degradation Effect Parameters:

 IKF:     Forward knee current (default value = ∞ Amp) Levels 1,2

 IKR:     Reverse knee current (default value = ∞ Amp) Levels 1,2


Parasitic Resistor Parameters:

 RS:      Series resistance at reference temperature (default value = 0 Ohm) Levels 1,2

 RB:      Zener breakdown resistance at reference temperature (default value = 0 Ohm) Levels 1,2


Junction Capacitance Parameters:

 CJ:      Zero-bias bulk capacitance at reference temperature (default value = 0.5e-12 F) Level 1

 MJ:      Bulk junction grading coefficient (default value = 0.33) Levels 1,2

 CJSW:    Zero-bias perimeter capacitance at reference temperature (default value = 0.5e-12 F) Level 1

 MJSW:    Perimeter capacitance grading coefficient (default value = 0.33) Levels 1,2

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1,2


Transit Time Parameters:

 TT:      Transit time at reference temperature (default value = 0 sec) Levels 1,2


Temperature Compensation Parameters:

 TRS:     Linear temperature coefficient of series resistance (default value = 0 1/K) Levels 1,2

 TRB:     Linear temperature coefficient of Zener resistance (default value = 0 1/K) Levels 1,2

 TTT1:    Linear temperature coefficient of transit time (default value = 0 1/K) Levels 1,2

 TTT2:    Quadratic temperature coefficient of transit time (default value = 0 1/K2) Levels 1,2

 XTI:     Temperature exponent of saturation current (default value = 3) Levels 1,2

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 1,2


Level=2 General Parameters:

 M:       Diode multiplier (default value = 1) Level 2


Level=2 Geometric Parameters:

 L:       Diode length (default value = 0 m) Level 2

 W:       Diode width (default value = 0 m) Level 2

 LP:      Polysilicon length (default value = 0 m) Level 2

 WP:      Polysilicon width (default value = 0 m) Level 2

 XP:      Widening of polysilicon due to masking and etching (default value = 0 m) Level 2

 XOI:     Polysilicon thickness (default value = 0 m) Level 2

 LM:      Metal length (default value = 0 m) Level 2

 WM:      Metal width (default value = 0 m) Level 2

 XM:      Widening of metal due to masking and etching (default value = 0 m) Level 2

 XOM:     Metal thickness (default value = 0 m) Level 2


Level=2 Electrical Parameters:

 JS:      Saturation current density at reference temperature (default value = 1e-4 Amp/m2) Level 2

 JSW:     Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2) Level 2


Level=2 Junction Capacitance Parameters:

 CJ2:     Zero-bias bulk capacitance per meter square at reference temperature (default value = 1e-4 F/m2) Level 2

 CJSW2:   Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) Level 2


Initialization Parameters:

 rampTime: Initial ramping time for sources (default value = 0 s) Levels 1,2


Numerical Parameters:

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1,2

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1,2

 GminDC:  Leakage conductance (default value = 1e-16 mho) Levels 1,2


Compiler Parameters:

 enforceStates:  State selector (default value = true) Levels 1,2
                   enforceStates = true:   Use (external) capacitive voltages as state variables
                   enforceStates = false:  Use (internal) bond graph efforts as state variables

References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.18.
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