.BondLib.Semiconductors.Dreal

Information

The real diode element is a passive OnePort element. It inherits the effort and flow variables from the passive OnePort. Real diodes are a special class of non-linear resistors.

The real diode model consists of the diode itself and an parallel Ohmic resistance R. The diode formula essentially is:

f = Ids*(exp(e/Vt) - 1)

However, if the exponent e/Vt reaches the limit Maxexp, the diode characterisic is linearly continued to avoid overflow.

The causality of the real diode element is free.


Potential variables:

 e:       Bondgraphic effort variable

 f:       Bondgraphic flow variable, normalized positive for flows into the model


Parameters:

 Ids:     Saturation current (default value = 1e-6 Amp)

 Vt:      Thermal voltage (default value = 0.04 Volt)

 Maxexp:  Maximum exponent (default value = 15)

 R:       Parallel Ohmic leakage resistance (default value = 1e8 Ohm)


Equations:

f = if (e/Vt > Maxexp) then Ids*(exp(Maxexp)*(1 + e/Vt - Maxexp) - 1) + e/R else Ids*(exp(e/Vt) - 1) + e/R


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