.BondLib.Semiconductors.Dreal

Information

The real diode model consists of the diode itself and an parallel Ohmic resistance R. The diode formula essentially is:

f = Ids*(exp(e/Vt) - 1)

However, if the exponent e/Vt reaches the limit Maxexp, the diode characterisic is linearly continued to avoid overflow.

The causality of the real diode element is free.

Potential variables:

 e:       Bondgraphic effort variable

 f:       Bondgraphic flow variable, normalized positive for flows into the model


Parameters:

 Ids:     Saturation current (default value = 1e-6 Amp)

 Vt:      Thermal voltage (default value = 0.04 Volt)

 Maxexp:  Maximum exponent (default value = 15)

 R:       Parallel Ohmic leakage resistance (default value = 1e8 Ohm)

Equations:

f = if (e/Vt > Maxexp) then Ids*(exp(Maxexp)*(1 + e/Vt - Maxexp) - 1) + e/R else Ids*(exp(e/Vt) - 1) + e/R