.BondLib.Semiconductors.Utilities.DjS

Information

The junction diode model is a simple diode with an exponential characteristic. The diode formula essentially is:

f = Is*(exp(e/Vt) - 1)

However, if the exponent e/Vt reaches either an upper limit EMax or a lower limit Emin, the diode characterisic is linearly continued to avoid overflow or underflow, respectively.

The causality of the junction diode element is free.

Potential variables:

 e1:    Bondgraphic effort variable of inflow

 f1:    Bondgraphic flow variable of inflow, normalized positive for flows into the model

 e2:    Bondgraphic effort variable of outflow

 f2:    Bondgraphic flow variable of outflow, normalized positive for flows out of the model


Parameters:

 Tnom:  Reference temperature (default value = 300.15 K)

 Is:    Transport saturation current (default value = 1e-16 Amp)

 EG:    Energy gap for temperature effect on saturation current (default value = 1.11 Volt)

 N:     Current emission coefficient (default value = 1)

 XTI:   Saturation current temperature exponent (default value = 3)

 EMin:  Minimum exponent (default value = -100)

 EMax:  Maximum exponent (default value = 40)

Equations:

RTemp = e2/Tnom
ISval = IS*exp((RTemp - 1)*EG/Vt + XTI*ln(RTemp))
ExMin = exp(EMin)
ExMax = exp(EMax)
et = e1/(Vt*N)
f1 = ISval*(if et < EMin then ExMin*(et - EMin + 1) - 1 else if et > EMax then ExMax*(et - EMax + 1) - 1 else exp(et) - 1)
f2 = 0