The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.
W L Beta Vt K2 K5 dW dL m m A/V^2 V - - m m 12.e-6 4.e-6 0.062e-3 -4.5 0.24 0.61 -1.2e-6 -0.9e-6 depletion 60.e-6 3.e-6 0.048e-3 0.1 0.08 0.68 -1.2e-6 -0.9e-6 enhancement 12.e-6 4.e-6 0.0625e-3 -0.8 0.21 0.78 -1.2e-6 -0.9e-6 zero 50.e-6 8.e-6 0.0299e-3 0.24 1.144 0.7311 -5.4e-6 -4.e-6 20.e-6 6.e-6 0.041e-3 0.8 1.144 0.7311 -2.5e-6 -1.5e-6 30.e-6 9.e-6 0.025e-3 -4.0 0.861 0.878 -3.4e-6 -1.74e-6 30.e-6 5.e-6 0.031e-3 0.6 1.5 0.72 0 -3.9e-6 50.e-6 6.e-6 0.0414e-3 -3.8 0.34 0.8 -1.6e-6 -2.e-6 depletion 50.e-6 5.e-6 0.03e-3 0.37 0.23 0.86 -1.6e-6 -2.e-6 enhancement 50.e-6 6.e-6 0.038e-3 -0.9 0.23 0.707 -1.6e-6 -2.e-6 zero 20.e-6 4.e-6 0.06776e-3 0.5409 0.065 0.71 -0.8e-6 -0.2e-6 20.e-6 4.e-6 0.06505e-3 0.6209 0.065 0.71 -0.8e-6 -0.2e-6 20.e-6 4.e-6 0.05365e-3 0.6909 0.03 0.8 -0.3e-6 -0.2e-6 20.e-6 4.e-6 0.05365e-3 0.4909 0.03 0.8 -0.3e-6 -0.2e-6 12.e-6 4.e-6 0.023e-3 -4.5 0.29 0.6 0 0 depletion 60.e-6 3.e-6 0.022e-3 0.1 0.11 0.65 0 0 enhancement 12.e-6 4.e-6 0.038e-3 -0.8 0.33 0.6 0 0 zero 20.e-6 6.e-6 0.022e-3 0.8 1 0.66 0 0
References: [Spiro1990]