recordBjtModelLineParams

Record for bjt model line parameters

Extends from Modelica.Icons.Record (Icon for records).

Information

This record contains the model line (also called model card) parameters that are used for the bipolar transistor model in SPICE3.

Components

TypeNameDefaultDescription
Realm_typeDevice type : 1 = n, -1 = p
SI.Temperaturem_tnomTNOM, Parameter measurement temperature
SI.Currentm_satCurIS, Saturation Current
Realm_betaFBF, Ideal forward beta
Realm_emissionCoeffFNF, Forward emission coefficient
Realm_leakBEemissionCoeffNE, B-E leakage emission coefficient
SI.Currentm_leakBEcurrentISE, B-E leakage saturation current
Realm_c2C2, Obsolete parameter name
SI.Currentm_leakBCcurrentISC, B-C leakage saturation current
Realm_c4C4, Obsolete parameter name
Realm_leakBEcurrentIsGiven
Realm_c2IsGiven
Realm_leakBCcurrentIsGiven
Realm_c4IsGiven
Realm_betaRBR, Ideal reverse beta
Realm_emissionCoeffRNR, Reverse emission coefficient
Realm_leakBCemissionCoeffNC, B-C leakage emission coefficient
SI.Voltagem_earlyVoltFVAF, Forward Early voltage
SI.Currentm_rollOffFIKF, Forward beta roll-off corner current
SI.Voltagem_earlyVoltRVAR, Reverse Early voltage
SI.Currentm_rollOffRIKR, reverse beta roll-off corner current
SI.Resistancem_emitterResistRE, Emitter resistance
SI.Resistancem_collectorResistRC, Collector resistance
SI.Currentm_baseCurrentHalfResistIRB, Current for base resistance=(rb+rbm)/2
SI.Resistancem_baseResistRB, Zero bias base resistance
SI.Resistancem_minBaseResistRBM, Minimum base resistance
Realm_minBaseResistIsGiven
Types.Capacitancem_depletionCapBECJE, Zero bias B-E depletion capacitance
SI.Voltagem_potentialBEVJE, B-E built in potential
Realm_junctionExpBEMJE, B-E built in potential
SI.Timem_transitTimeFTF, Ideal forward transit time
Realm_transitTimeBiasCoeffFXTF, Coefficient for bias dependence of TF
SI.Currentm_transitTimeHighCurrentFITF, High current dependence of TF
SI.Voltagem_transitTimeFVBCVTF, Voltage giving VBC dependence of TF
SI.Frequencym_excessPhasePTF, Excess phase
Types.Capacitancem_depletionCapBCCJC, Zero bias B-C depletion capacitance
SI.Voltagem_potentialBCVJC, B-C built in potential
Realm_junctionExpBCMJC, B-C junction grading coefficient
Realm_baseFractionBCcapXCJC, Fraction of B-C cap to internal base
SI.Timem_transitTimeRTR, Ideal reverse transit time
Types.Capacitancem_capCSCJS, Zero bias C-S capacitance
SI.Voltagem_potentialSubstrateVJS, Zero bias C-S capacitance
Realm_exponentialSubstrateMJS, Substrate junction grading coefficient
Realm_betaExpXTB, Forward and reverse beta temp. exp.
SI.GapEnergym_energyGapEG, Energy gap for IS temp. dependency
Realm_tempExpISXTI,Temp. exponent for IS
Realm_fNcoefKF, Flicker Noise Coefficient
Realm_fNexpAF, Flicker Noise Exponent
Realm_depletionCapCoeffFC, Forward bias junction fit parameter
SI.Conductancem_collectorConduct
SI.Conductancem_emitterConduct
SI.InversePotentialm_transitTimeVBCFactor
Realm_excessPhaseFactor
SI.InversePotentialm_invEarlyVoltF
Types.InverseElectricCurrentm_invRollOffF
SI.InversePotentialm_invEarlyVoltR
Types.InverseElectricCurrentm_invRollOffR
Realm_bNPN1
Realm_bPNP1
Realm_area1.0
Booleanm_bOfffalse
SI.Voltagem_dICvbe0
Realm_bICvbeIsGiven0
SI.Voltagem_dICvce0
Realm_bICvceIsGiven0
Booleanm_bSensAreafalse
Realm_dTemp1