recordModelcardBJT2
Record with technology parameters (.model)
Extends from Modelica.Icons.Record (Icon for records).
Information
Modelcard parameters for BJT model, both PNP and NPN
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.Units.NonSI.Temperature_degC | TNOM | 27 | Parameter measurement temperature |
| SI.Current | IS | 1e-16 | Transport saturation current |
| Real | BF | 100.00 | Ideal maximum forward beta F |
| Real | NF | 1.0 | Forward current emission coefficientF |
| Real | NE | 1.5 | B-E leakage emission coefficient |
| SI.Current | ISE | -1e40 | B-E leakage saturation current, default = 0 |
| Real | C2 | -1e40 | Obsolete parameter name, default = 0 |
| SI.Current | ISC | -1e40 | B-C leakage saturation current, default = 0 |
| Real | C4 | -1e40 | Obsolete parameter name, default = 0 |
| Real | BR | 1.0 | Ideal maximum reverse beta |
| Real | NR | 1.0 | Reverse current emission coefficient |
| Real | NC | 2.0 | B-C leakage emission coefficient |
| SI.Voltage | VAF | 0.0 | Forward Early voltage |
| SI.Current | IKF | 0.0 | Forward beta roll-off corner current |
| SI.Voltage | VAR | 0.0 | Reverse Early voltage |
| SI.Current | IKR | 0.0 | Reverse beta roll-off corner current |
| SI.Resistance | RE | 0.0 | Emitter resistance |
| SI.Resistance | RC | 0.0 | Collector resistance |
| SI.Current | IRB | 0.0 | Current for base resistance = (rb+rbm)/2 |
| SI.Resistance | RB | 0.0 | Zero bias base resistance |
| SI.Resistance | RBM | 0.0 | Minimum base resistance, default = 0.0 |
| Types.Capacitance | CJE | 0.0 | Zero bias B-E depletion capacitance |
| SI.Voltage | VJE | 0.75 | B-E built in potential |
| Real | MJE | 0.33 | B-E junction exponential factor |
| SI.Time | TF | 0.0 | Ideal forward transit time |
| Real | XTF | 0.0 | Coefficient for bias dependence of TF |
| SI.Current | ITF | 0.0 | High current dependence of TF, |
| SI.Voltage | VTF | 0.0 | Voltage giving VBC dependence of TF |
| SI.Frequency | PTF | 0.0 | Excess phase at freq=1/(TF*2*Pi) Hz |
| Types.Capacitance | CJC | 0.0 | Zero bias B-C depletion capacitance |
| SI.Voltage | VJC | 0.75 | B-C built in potential |
| Real | MJC | 0.33 | B-C junction grading coefficient |
| Real | XCJC | 1.0 | Fraction of B-C cap to internal base |
| SI.Time | TR | 0.0 | Ideal reverse transit time |
| Types.Capacitance | CJS | 0.0 | Zero bias C-S capacitance |
| SI.Voltage | VJS | 0.75 | Substrate junction built-in potential |
| Real | MJS | 0.0 | Substrate junction grading coefficient |
| Real | XTB | 0.0 | Forward and reverse beta temperature exponent |
| SI.GapEnergy | EG | 1.11 | Energy gap for IS temperature effect on IS |
| Real | XTI | 3.0 | Temperature exponent for IS |
| Real | KF | 0.0 | Flicker Noise Coefficient |
| Real | AF | 1.0 | Flicker Noise Exponent |
| Real | FC | 0.5 | Forward bias junction fit parameter |