recordModelcardMOS
Record with technology parameters (.model)
Extends from Modelica.Icons.Record (Icon for records).
Information
Modelcard parameters for MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| SI.Voltage | VTO | -1e40 | Zero-bias threshold voltage, default 0 |
| SI.Transconductance | KP | -1e40 | Transconductance parameter, default 2e-5 |
| Real | GAMMA | -1e40 | Bulk threshold parameter, default 0 |
| SI.Voltage | PHI | -1e40 | Surface potential, default 0.6 |
| SI.InversePotential | LAMBDA | 0 | Channel-length modulation, default 0 |
| SI.Resistance | RD | -1e40 | Drain ohmic resistance, default 0 |
| SI.Resistance | RS | -1e40 | Source ohmic resistance, default 0 |
| Types.Capacitance | CBD | -1e40 | Zero-bias B-D junction capacitance, default 0 |
| Types.Capacitance | CBS | -1e40 | Zero-bias B-S junction capacitance, default 0 |
| SI.Current | IS | 1e-14 | Bulk junction saturation current |
| SI.Voltage | PB | 0.8 | Bulk junction potential |
| SI.Permittivity | CGSO | 0.0 | Gate-source overlap capacitance per meter channel width |
| SI.Permittivity | CGDO | 0.0 | Gate-drain overlap capacitance per meter channel width |
| SI.Permittivity | CGBO | 0.0 | Gate-bulk overlap capacitance per meter channel width |
| SI.Resistance | RSH | 0.0 | Drain and source diffusion sheet resistance |
| SI.CapacitancePerArea | CJ | 0.0 | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
| Real | MJ | 0.5 | Bulk junction bottom grading coefficient |
| SI.Permittivity | CJSW | 0.0 | Zero-bias junction sidewall cap. per meter of junction perimeter |
| Real | MJSW | 0.5 | Bulk junction sidewall grading coefficient |
| SI.CurrentDensity | JS | 0.0 | Bulk junction saturation current per sq-meter of junction area |
| SI.Length | TOX | -1e40 | Oxide thickness, default 1e-7 |
| Real | NSUB | -1e40 | Substrate doping, default 0 |
| Modelica.Units.NonSI.PerArea_cm | NSS | 0.0 | Surface state density |
| Real | TPG | 1.0 | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
| SI.Length | LD | 0.0 | Lateral diffusion |
| Modelica.Units.NonSI.Area_cmPerVoltageSecond | UO | 600 | Surface mobility |
| Real | KF | 0 | Flicker noise coefficient |
| Real | AF | 1.0 | Flicker noise exponent |
| Real | FC | 0.5 | Coefficient for forward-bias depletion capacitance formula |
| Modelica.Units.NonSI.Temperature_degC | TNOM | 27 | Parameter measurement temperature, default 27 |
| Integer | LEVEL | 1 | Model level: Shichman-Hodges |