The internal junction diode is used inside the junction capacitance model to compute the diodic current, which however is only used as a mathematical construct, i.e., doesn't carry any power. The diodic current, once computed, is then passed on as a modulating signal to the two non-linear current sources that actually carry the entire diodic (Ohmic) current of the bipolar junction transistor.
Parameters:
Is: Transport saturation current (default value = 1e-16 Amp)
EG: Energy gap for temperature effect on saturation current (default value = 1.11 Volt)
N: Current emission coefficient (default value = 1)
XTI: Saturation current temperature exponent (default value = 3)
Area: Relative area occupied by the diode (default value = 1)
Level: Transistor modeling level (Ebers-Moll = 1; Gummel-Poon = 2) (default value = 2)
EMin: if x < EMin, the exp(x) function is linearized (default value = -100)
EMax: if x > EMax, the exp(x) function is linearized (default value = 40)
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