modelNFET
Spice-style n-channel JFET in bond graph technology
Information
The Spice-style n-channel JFET model contains an internal n-channel JFET together with the three external resistances.
Parameters:
Level: JFET modeling level (default value = 1)
Level=1: Shichman-Hodges (Si) JFET model
Level=2: Improved Shichman-Hodges (Si) JFET model [1]
Level=3: Statz-Curtice (GaAs) MESFET model [2,3]
Area: Relative area occupied by the diode (default value = 1) Levels 1-3
Basic Electrical Parameters:
VT0: Threshold voltage at reference temperature (default value = 0 Volt) Levels 1-3
VT0 > 0 for enhancement JFET
VT0 < 0 for depletion JFET
LAMBDA: Channel length modulation (default value = 0 1/Volt) Levels 1-3
BETA: Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 1-3
N: Current emission coefficient (default value = 1) Levels 1-3
IS: Transport saturation current (default value = 1e-14 Amp) Levels 1-3
PB: Built-in potential at reference temperature (default value = 0.8 Volt) Levels 1-3
Parasitic Resistor Parameters:
RS: Source resistance (default value = 0 Ohm) Levels 1-3
RD: Drain resistance (default value = 0 Ohm) Levels 1-3
RG: Gate resistance (default value = 0 Ohm) Levels 1-3
Junction Capacitance Parameters:
CGS: Zero-bias gate-source depletion capacitance at reference temperature (default value = 0.5e-12 F) Levels 1-3
CGD: Zero-bias gate-drain depletion capacitance at reference temperature (default value = 0.5e-12 F) Levels 1-3
M: Junction grading coefficient Levels 1-3
default value = 0.33 for Levels=1,2 (Si)
default value = 0.5 for Level=3 (GaAs)
FC: Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1,2
Transit Time Parameters:
TT: Ideal transit time (default value = 5e-9 sec) Levels 1,2
Temperature Compensation Parameters:
TCV: Linear temperature coefficient of threshold voltage (default value = 0 Volt/K) Levels 1-3
TRS: Linear temperature coefficient of source resistance (default value = 0 1/K) Levels 1-3
TRD: Linear temperature coefficient of drain resistance (default value = 0 1/K) Levels 1-3
TRG: Linear temperature coefficient of gate resistance (default value = 0 1/K) Levels 1-3
Tnom: Reference temperature (default value = 300.15 K) Levels 1-3
XTI: Saturation current temperature exponent Levels 1-3
default value = 3 for Levels=1,2 (Si)
default value = 2 for Level=3 (GaAs)
BEX: Mobility temperature exponent (default value = 0) Levels 1-3
EG: Energy gap for temperature effect on saturation current at 0 K Levels 1-3
default value = 1.11 Volt for Levels=1,2 (Si)
default value = 0.73 Volt for Level=3 (GaAs)
Level=2 Electrical Parameters:
LAM1: Channel length modulation gate voltage parameter (default value = 0 1/Volt) Level 2
Level=3 Electrical Parameters:
ALPHA: Hyperbolic tangient fitting parameter (default value = 1) Level 3
B: Measure of doping profile (default value = 0 1/Volt) Level 3
DELTA: Voltage range for transition (default value = 0.2 Volt) Level 3
VMAX: Limit voltage for carrier velocity saturation (default value = 0.5 Volt) Level 3
Numerical Parameters:
EMin: if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1-3
EMax: if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1-3
GminDC: Leakage conductance (default value = 1e-15 Mho) Levels 1-3
References:
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
- Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Integer | Level | 1 | JFET modeling level (check documentation layer for details) |
| Real | Area | 1 | Relative area occupied by capacitor |
| Electrical parameters | |||
| Modelica.SIunits.Voltage | VT0 | 0 | Threshold voltage at reference temperature (VT0>0: enhancement type, VT0<0: depletion type) |
| Modelica.SIunits.InversePotential | LAMBDA | 0 | Channel length modulation |
| Modelica.SIunits.Transconductance | BETA | 0 | Transconductance parameter at reference temperature |
| Real | N | 1 | Current emission coefficient |
| Modelica.SIunits.Current | IS | 1.e-14 | Transport saturation current at reference temperature |
| Modelica.SIunits.Voltage | PB | 0.8 | Built-in potential at reference temperature |
| Parasitic resistance parameters | |||
| Modelica.SIunits.Resistance | RS | 0 | Source resistance |
| Modelica.SIunits.Resistance | RD | 0 | Drain resistance |
| Modelica.SIunits.Resistance | RG | 0 | Gate resistance |
| Junction capacitance parameters | |||
| Modelica.SIunits.Capacitance | CGS | 0.5e-12 | Zero-bias gate-source depletion capacitance at reference temperature |
| Modelica.SIunits.Capacitance | CGD | 0.5e-12 | Zero-bias gate-drain depletion capacitance at reference temperature |
| Real | M | if Level == 3 then 0.5 else 0.33 | Junction grading coefficient |
| Real | FC | 0.5 | Factor for linearization of depletion capacitance formula |
| Transit time parameters | |||
| Modelica.SIunits.Time | TT | 5e-9 | Ideal transit time |
| Temperature compensation parameters | |||
| Modelica.SIunits.Temperature | Tnom | 300.15 | Reference temperature |
| Real | XTI | if Level == 3 then 2 else 3 | Saturation current temperature exponent |
| Real | BEX | 0 | Mobility temperature exponent |
| Modelica.SIunits.Voltage | EG | if Level == 3 then 0.73 else 1.11 | Energy gap for temperature effect on saturation current at 0 K |
| Real | TCV | 0 | Linear temperature coefficient of threshold voltage |
| Real | TRS | 0 | Linear temperature coefficient of source resistance |
| Real | TRD | 0 | Linear temperature coefficient of drain resistance |
| Real | TRG | 0 | Linear temperature coefficient of gate resistance |
| Level=2 › Electrical parameters | |||
| Modelica.SIunits.InversePotential | LAM1 | 0 | Channel length modulation gate voltage parameter |
| Level=3 › Electrical parameters | |||
| Modelica.SIunits.InversePotential | ALPHA | 1 | Hyperbolic tangient fitting parameter |
| Modelica.SIunits.InversePotential | B | 0 | Measure of doping profile |
| Modelica.SIunits.Voltage | DELTA | 0.2 | Voltage range for transition |
| Modelica.SIunits.Voltage | VMAX | 0.5 | Limit voltage for carrier velocity saturation |
| Advanced › Numerical parameters | |||
| Real | EMin | -100 | if x < EMin, the exp(x) function is linearized |
| Real | EMax | 40 | if x > EMax, the exp(x) function is linearized |
| Modelica.SIunits.Conductance | GminDC | 1e-16 | Leakage conductance |
Connectors
| Type | Name | Default | Description |
|---|---|---|---|
| BondLib.Interfaces.BondCon | G | Gate | |
| BondLib.Interfaces.BondCon | H | Heat | |
| BondLib.Interfaces.BondCon | S | Source | |
| BondLib.Interfaces.BondCon | D | Drain |
Components
| Type | Name | Default | Description |
|---|---|---|---|
| Junctions.J0p2 | J0p2_1 | ||
| BondLib.Bonds.Bond | B1 | ||
| BondLib.Junctions.J1p3 | J1p3_1 | ||
| BondLib.Bonds.Bond | B2 | ||
| BondLib.Spice.Utilities.NFETint | NFETint1 | ||
| BondLib.Bonds.eBond | B3 | ||
| BondLib.Junctions.J0p5 | J0p5_1 | ||
| Junctions.J0p2 | J0p2_2 | ||
| BondLib.Bonds.Bond | B4 | ||
| BondLib.Junctions.J1p3 | J1p3_2 | ||
| BondLib.Bonds.Bond | B5 | ||
| BondLib.Bonds.Bond | B6 | ||
| BondLib.Junctions.J1p3 | J1p3_3 | ||
| BondLib.Bonds.Bond | B7 | ||
| Junctions.J0p2 | J0p2_3 | ||
| BondLib.Bonds.Bond | B8 | ||
| BondLib.Bonds.Bond | B9 | ||
| BondLib.Bonds.Bond | B10 | ||
| BondLib.Spice.RS | Rd | ||
| BondLib.Spice.RS | Rs | ||
| BondLib.Spice.RS | Rg | ||
| BondLib.Bonds.eBond | B11 | ||
| BondLib.Bonds.eBond | B12 | ||
| BondLib.Bonds.eBond | B13 |