modelCjD
Spice-style capacitor model for diodes
Extends from BondLib.Interfaces.TwoPort (Partial model invoking two bondgraphic connectors).
Information
The Spice-style junction capacitance for DIODEs computes the depletion and diffusion capacitance value of a junction used in a DIODE. Different Spice dialects vary in the formulae they use for this purpose. Many Spice dialects actually don't use a formula for the junction capacitance at all, but rather compute the electric charge stored in the junction directly, which is conceptually cleaner. However, that approach is computationally cumbersome, as it leads to an awkward algebraic loop [1]. Thus, we chose to compute the junction capacitance, and use a (physically incorrect) approximate non-linear capacitor model. The numerical error should remain small, as the time constants associated with temperature variation are much larger than those associated with electrical phenomena.This particular model uses the capacitance formulae advocated in [2].
Parameters:
Level: DIODE modeling level (default value = 1)
Level=1: Non-geometric junction diode
Level=2: Fowler-Nordheim diode
Level=3: Geometric junction diode
Tnom: Reference temperature (default value = 300.15 K)
IS: Saturation current at reference temperature (default value = 1e-14 Amp)
N: Current mission coefficient (default value = 1)
TT: Transit time at reference temperature (default value = 0 sec)
CJ: Zero-bias bulk capacitance at reference temperature (default value = 0.5e-12 F)
PB: Built-in junction potential at reference temperature (default value = 0.8 Volt)
MJ: Bulk junction grading coefficient (default value = 0.33)
EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)
XTI: Temperature exponent of saturation current (default value = 3)
FC: Forward-bias depletion capacitance coefficient (default value = 0.5)
BV: Reverse breakdown voltage at reference temperature (default value = 0 Volt)
IBV: Reverse breakdown current (default value = 0 Amp)
TCV: Linear temperature coefficient of breakdown voltage (default value = 0 V/K)
TTT1: Linear temperature coefficient of transit time (default value = 0 s/K)
TTT2: Quadratic temperature coefficient of transit time (default value = 0 s/K2)
ISW: Saturation current of perimeter at reference temperature (default value = 0 Amp)
CJSW: Zero-bias perimeter capacitance at reference temperature (default value = 0.5e-12 F)
PHP: Built-in perimeter potential at reference temperature (default value = 0.8 Volt)
MJSW: Perimeter capacitance grading coefficient (default value = 0.33)
TOX: Thin oxide thickness (default value = 1e-7 m)
GminDC: Leakage conductance (default value = 1e-16 mho)
Area: Relative area occupied by the diode (default value = 1)
PJ: Relative perimeter width (default value = 1)
EMin: if x < EMin, the exp(x) function is linearized (default value = -100)
EMax: if x > EMax, the exp(x) function is linearized (default value = 40)
L: Diode length (default value = 0 m)
W: Diode width (default value = 0 m)
M: Diode multiplier (default value = 1)
JS: Saturation current density at reference temperature (default value = 1e-4 Amp/m2)
CJ2: Zero-bias bulk capacitance per meter square at reference temperature (default value = 1e-4 F/m2)
JSW: Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2)
CJSW2: Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m)
LP: Polysilicon length (default value = 0 m)
WP: Polysilicon width (default value = 0 m)
XP: Widening of polysilicon due to masking and etching (default value = 0 m)
XOI: Polysilicon thickness (default value = 0 m)
LM: Metal length (default value = 0 m)
WM: Metal width (default value = 0 m)
XM: Widening of metal due to masking and etching (default value = 0 m)
XOM: Metal thickness (default value = 0 m)
JF: Forward Fowler-Nordheim current coefficient (default value = 0 A/V2)
JR: Reverse Fowler-Nordheim current coefficient (default value = 0 A/V2)
EF: Forward Fowler-Nordheim critical electrical field (default value = 0 V/m)
ER: Reverse Fowler-Nordheim critical electrical field (default value = 0 V/m)
References:
- Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York, pp. 224-225.
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.200.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Integer | Level | 1 | DIODE modeling level (check documentation window for details) |
| Modelica.SIunits.Temperature | Tnom | 300.15 | Reference temperature |
| Modelica.SIunits.Current | IS | 1e-14 | Saturation current at reference temperature |
| Real | N | 1 | Current emission coefficient |
| Modelica.SIunits.Time | TT | 0 | Transit time at reference temperature |
| Modelica.SIunits.Capacitance | CJ | 0.5e-12 | Zero-bias bulk capacitance at reference temperature |
| Modelica.SIunits.Voltage | PB | 0.8 | Built-in junction potential at reference temperature |
| Real | MJ | 0.33 | Bulk junction grading coefficient |
| Modelica.SIunits.Voltage | EG | 1.11 | Energy gap for temperature effect on saturation current at 0 K |
| Real | XTI | 3 | Saturation current temperature exponent |
| Real | FC | 0.5 | Forward-bias depletion capacitance coefficient |
| Modelica.SIunits.Voltage | BV | 0 | Reverse breakdown voltage at reference temperature |
| Modelica.SIunits.Current | IBV | 0 | Reverse breakdown current |
| Real | TCV | 0 | Temperature coefficient of breakdown voltage |
| Real | TTT1 | 0 | Linear temperature coefficient of transit time |
| Real | TTT2 | 0 | Quadratic temperature coefficient of transit time |
| Modelica.SIunits.Current | ISW | 0 | Saturation current of periphery at reference temperature |
| Modelica.SIunits.Capacitance | CJSW | 0.5e-12 | Zero-bias perimeter capacitance at reference temperature |
| Modelica.SIunits.Voltage | PHP | 0.8 | Built-in perimeter potential at reference temperature |
| Real | MJSW | 0.33 | Perimeter capacitance grading coefficient |
| Modelica.SIunits.Length | TOX | 1e-7 | Thin oxide thickness |
| Modelica.SIunits.Conductance | GminDC | 1e-16 | Leakage conductance |
| Real | Area | 1 | Relative device area |
| Real | PJ | 1 | Relative perimeter width |
| Real | EMin | -100 | if x < EMin, the exp(x) function is linearized |
| Real | EMax | 40 | if x > EMax, the exp(x) function is linearized |
| Modelica.SIunits.Length | L | 0 | Diode length |
| Modelica.SIunits.Length | W | 0 | Diode width |
| Integer | M | 1 | Diode multiplier |
| Modelica.SIunits.CurrentDensity | JS | 1e-4 | Saturation current density at reference temperature |
| Real | CJ2 | 1e-4 | Zero-bias bulk capacitance per square meter at reference temperature |
| Real | JSW | 0 | Saturation current density of periphery at reference temperature |
| Real | CJSW2 | 1e-9 | Zero-bias perimeter capacitance per meter at reference temperature |
| Modelica.SIunits.Length | LP | 0 | Polysilicon length |
| Modelica.SIunits.Length | WP | 0 | Polysilicon width |
| Modelica.SIunits.Length | XP | 0 | Widening of polysilicon due to masking and etching |
| Modelica.SIunits.Length | XOI | 0 | Polysilicon thickness |
| Modelica.SIunits.Length | LM | 0 | Metal length |
| Modelica.SIunits.Length | WM | 0 | Metal width |
| Modelica.SIunits.Length | XM | 0 | Widening of metal due to masking and etching |
| Modelica.SIunits.Length | XOM | 0 | Metal thickness |
| Real | JF | 0 | Forward FN current coefficient |
| Real | JR | 0 | Reverse FN current coefficient |
| Modelica.SIunits.ElectricFieldStrength | EF | 0 | Forward critical electrical field |
| Modelica.SIunits.ElectricFieldStrength | ER | 0 | Reverse critical electrical field |
Connectors
| Type | Name | Default | Description |
|---|---|---|---|
| BondLib.Interfaces.BondCon | BondCon1 (from TwoPort) | Left bond graph connector | |
| BondLib.Interfaces.BondCon | BondCon2 (from TwoPort) | Right bond graph connector | |
| Modelica.Blocks.Interfaces.RealOutput | id | Diode current |
Components
| Type | Name | Default | Description |
|---|---|---|---|
| Real | e1 (from TwoPort) | Bondgraphic primary effort | |
| Real | f1 (from TwoPort) | Bondgraphic primary flow | |
| Real | e2 (from TwoPort) | Bondgraphic secondary effort | |
| Real | f2 (from TwoPort) | Bondgraphic secondary flow | |
| BondLib.Junctions.J0p3 | J0p3_1 | ||
| BondLib.Bonds.fBond | B1 | ||
| BondLib.Sensors.De | vbi | ||
| BondLib.Sources.mSe | Vbi | ||
| BondLib.Bonds.fBond | B3 | ||
| BondLib.Junctions.J1p3 | J1p3_1 | ||
| BondLib.Bonds.eBond | B4 | ||
| BondLib.Sensors.Df | id1 | ||
| BondLib.Bonds.fBond | B5 | ||
| BondLib.Junctions.J0p3 | J0p3_2 | ||
| BondLib.Bonds.fBond | B6 | ||
| BondLib.Bonds.fBond | B7 | ||
| BondLib.Bonds.fBond | B8 | ||
| BondLib.Sensors.De | Tdev | ||
| BondLib.Junctions.J0p3 | J0p3_3 | ||
| BondLib.Spice.Utilities.Gj | Gj1 | ||
| BondLib.Bonds.eBond | B2 | ||
| BondLib.Semiconductors.Utilities.mC2 | Cj1 | ||
| BondLib.Spice.Utilities.nlCD | nlC1 | ||
| BondLib.Spice.Utilities.DjD | DjD1 | ||
| Bonds.eBond | B9 |