modelCjJ

Spice-style junction capacitor model for JFETs and MESFETs

Extends from BondLib.Interfaces.TwoPort (Partial model invoking two bondgraphic connectors).

Information

The Spice-style junction capacitance for JFETs and GaAs MESFETs computes the depletion and diffusion capacitance values of a junction used in a JFET / MESFET. Different Spice dialects vary in the formulae they use for this purpose. Many Spice dialects actually don't use a formula for the junction capacitance at all, but rather compute the electric charge stored in the junction directly, which is conceptually cleaner. However, that approach is computationally cumbersome, as it leads to an awkward algebraic loop [1]. Thus, we chose to compute the junction capacitance, and use a (physically incorrect) approximate non-linear capacitor model. The numerical error should remain small, as the time constants associated with temperature variation are much larger than those associated with electrical phenomena.


Parameters:

 Level:   JFET modeling level (default value = 1)
            Level=1: Shichman-Hodges (Si) JFET model
            Level=2: Improved Shichman-Hodges (Si) JFET model [2]
            Level=3: Statz-Curtice (GaAs) MESFET model [3,4]

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt)

 IS:      Transport saturation current (default value = 1e-14 Amp)

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K)

 EG:      Energy gap for temperature effect on saturation current at 0 K
            default value = 1.11 Volt for Levels=1,2 (Si)
            default value = 0.73 Volt for Level=3 (GaAs)

 N:       Current emission coefficient (default value = 1)

 XTI:     Saturation current temperature exponent
            default value = 3 for Levels=1,2 (Si)
            default value = 2 for Level=3 (GaAs)

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

 CGS:     Zero-bias gate-source depletion capacitance at reference temperature (default value = 0.5e-12 F)

 CGD:     Zero-bias gate-drain depletion capacitance at reference temperature (default value = 0.5e-12 F)

 M:       Junction grading coefficient
            default value = 0.33 for Levels=1,2 (Si)
            default value = 0.5  for Level=3 (GaAs)

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5)

 TT:      Ideal transit time (default value = 5e-9 sec)

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1)

 DELTA:   Voltage range for transition (default value = 0.2 Volt)

 VMAX:    Limit voltage for carrier velocity saturation (default value = 0.5 Volt)

 GminDC:  Leakage conductance (default value = 1e-15 Mho)

 Area:    Relative area occupied by the diode (default value = 1)

 GS:      True if gate-source junction (default value = true)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)


References:

  1. Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York, pp. 224-225.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
  3. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
  4. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.

Parameters

TypeNameDefaultDescription
IntegerLevel1JFET modeling level (check documentation layer for details)
Modelica.SIunits.TemperatureTnom300.15Reference temperature
Modelica.SIunits.VoltageVT00Threshold voltage at reference temperature
Modelica.SIunits.CurrentIS1.e-14Transport saturation current at reference temperature
RealTCV0Linear temperature coefficient of threshold voltage
Modelica.SIunits.VoltageEGif Level == 3 then 0.73 else 1.11Energy gap for temperature effect on saturation current at 0 K
RealN1Current emission coefficient
RealXTIif Level == 3 then 2 else 3Saturation current temperature exponent
Modelica.SIunits.VoltagePB0.8Built-in potential at reference temperature
Modelica.SIunits.CapacitanceCGS0.5e-12Zero-bias gate-source depletion capacitance at reference temperature
Modelica.SIunits.CapacitanceCGD0.5e-12Zero-bias gate-drain depletion capacitance at reference temperature
RealMif Level == 3 then 0.5 else 0.33Junction grading coefficient
RealFC0.5Factor for linearization of depletion capacitance formula
Modelica.SIunits.TimeTT5e-9Ideal transit time
Modelica.SIunits.InversePotentialALPHA0Hyperbolic tangient fitting parameter
Modelica.SIunits.VoltageDELTA0.2Voltage range for transition
Modelica.SIunits.VoltageVMAX0.5Limit voltage for carrier velocity saturation
Modelica.SIunits.ConductanceGminDC1e-16Leakage conductance
RealArea1Relative area occupied by capacitor
BooleanGStrueTrue if gate-source junction
RealEMin-100if x < EMin, the exp(x) function is linearized
RealEMax40if x > EMax, the exp(x) function is linearized

Connectors

TypeNameDefaultDescription
BondLib.Interfaces.BondConBondCon1 (from TwoPort)Left bond graph connector
BondLib.Interfaces.BondConBondCon2 (from TwoPort)Right bond graph connector
Modelica.Blocks.Interfaces.RealInputvdsDrain-source voltage
Modelica.Blocks.Interfaces.RealInputvgsGate-source voltage

Components

TypeNameDefaultDescription
Reale1 (from TwoPort)Bondgraphic primary effort
Realf1 (from TwoPort)Bondgraphic primary flow
Reale2 (from TwoPort)Bondgraphic secondary effort
Realf2 (from TwoPort)Bondgraphic secondary flow
BondLib.Bonds.eBondB1
BondLib.Semiconductors.Utilities.mC2Cj1
BondLib.Junctions.J0p4J0p4_1
BondLib.Bonds.fBondB7
BondLib.Sensors.DeTdev
BondLib.Bonds.eBondB3
BondLib.Bonds.fBondB2
BondLib.Bonds.fBondB5
BondLib.Bonds.eBondB6
BondLib.Spice.RSRd
BondLib.Spice.Utilities.nlCJCval
BondLib.Junctions.J0p4J0p4_2
BondLib.Spice.Utilities.DjJDjJ1