Parameters: Level: MOSFET modeling level (default value = 3) Level=0: Static injection model Level=1: Shichman-Hodges model Level=2: Grove-Frohman model Level=3: Empirical model Level=4: Simplified Grove-Frohman model IS: Transport saturation current (default value = 0 Amp) PB: Built-in potential at reference temperature (default value = 0.8 Volt) CJ: Zero-bias bulk capacitance per square meter at reference temperature (default value = 1e-4 F/m2) MJ: Bulk junction grading coefficient (default value = 0.33) CJSW: Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) MJSW: Perimeter capacitance grading coefficient (default value = 0.33) FC: Forward-bias depletion capacitance coefficient (default value = 0.5) A: Diffusion area (default value = 0 m2) P: Perimeter width (default value = 0 m) EG: Energy gap for temperature effect on saturation current (default value = 1.11 Volt) GminDC: Leakage conductance (default value = 1e-12 Mho) EMin: if x < EMin, the exp(x) function is linearized (default value = -100) EMax: if x > EMax, the exp(x) function is linearized (default value = 40)
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