Parameters:
Level: MOSFET modeling level (default value = 3)
Level=0: Static injection model
Level=1: Shichman-Hodges model
Level=2: Grove-Frohman model
Level=3: Empirical model
Level=4: Simplified Grove-Frohman model
IS: Transport saturation current (default value = 0 Amp)
PB: Built-in potential at reference temperature (default value = 0.8 Volt)
CJ: Zero-bias bulk capacitance per square meter at reference temperature (default value = 1e-4 F/m2)
MJ: Bulk junction grading coefficient (default value = 0.33)
CJSW: Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m)
MJSW: Perimeter capacitance grading coefficient (default value = 0.33)
FC: Forward-bias depletion capacitance coefficient (default value = 0.5)
A: Diffusion area (default value = 0 m2)
P: Perimeter width (default value = 0 m)
EG: Energy gap for temperature effect on saturation current (default value = 1.11 Volt)
GminDC: Leakage conductance (default value = 1e-12 Mho)
EMin: if x < EMin, the exp(x) function is linearized (default value = -100)
EMax: if x > EMax, the exp(x) function is linearized (default value = 40)
References: