Parameters: Level: DIODE modeling level (default value = 1) Level=1: Non-geometric junction diode Level=2: Fowler-Nordheim diode Level=3: Geometric junction diode Tnom: Reference temperature (default value = 300.15 K) IS: Saturation current at reference temperature (default value = 1e-14 Amp) N: Current mission coefficient (default value = 1) EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) XTI: Temperature exponent of saturation current (default value = 3) BV: Reverse breakdown voltage at reference temperature (default value = 0 Volt) IBV: Reverse breakdown current (default value = 0 Amp) TCV: Linear temperature coefficient of breakdown voltage (default value = 0 V/K) ISW: Saturation current of perimeter at reference temperature (default value = 0 Amp) TOX: Thin oxide thickness (default value = 1e-7 m) Area: Relative area occupied by the diode (default value = 1) PJ: Relative perimeter width (default value = 1) EMin: if x < EMin, the exp(x) function is linearized (default value = -100) EMax: if x > EMax, the exp(x) function is linearized (default value = 40) L: Diode length (default value = 0 m) W: Diode width (default value = 0 m) M: Diode multiplier (default value = 1) JS: Saturation current density at reference temperature (default value = 1e-4 Amp/m2) JSW: Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2) JF: Forward Fowler-Nordheim current coefficient (default value = 0 A/V2) JR: Reverse Fowler-Nordheim current coefficient (default value = 0 A/V2) EF: Forward Fowler-Nordheim critical electrical field (default value = 0 V/m) ER: Reverse Fowler-Nordheim critical electrical field (default value = 0 V/m)
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