Parameters:
Level: DIODE modeling level (default value = 1)
Level=1: Non-geometric junction diode
Level=2: Fowler-Nordheim diode
Level=3: Geometric junction diode
Tnom: Reference temperature (default value = 300.15 K)
IS: Saturation current at reference temperature (default value = 1e-14 Amp)
N: Current mission coefficient (default value = 1)
EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)
XTI: Temperature exponent of saturation current (default value = 3)
BV: Reverse breakdown voltage at reference temperature (default value = 0 Volt)
IBV: Reverse breakdown current (default value = 0 Amp)
TCV: Linear temperature coefficient of breakdown voltage (default value = 0 V/K)
ISW: Saturation current of perimeter at reference temperature (default value = 0 Amp)
TOX: Thin oxide thickness (default value = 1e-7 m)
Area: Relative area occupied by the diode (default value = 1)
PJ: Relative perimeter width (default value = 1)
EMin: if x < EMin, the exp(x) function is linearized (default value = -100)
EMax: if x > EMax, the exp(x) function is linearized (default value = 40)
L: Diode length (default value = 0 m)
W: Diode width (default value = 0 m)
M: Diode multiplier (default value = 1)
JS: Saturation current density at reference temperature (default value = 1e-4 Amp/m2)
JSW: Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2)
JF: Forward Fowler-Nordheim current coefficient (default value = 0 A/V2)
JR: Reverse Fowler-Nordheim current coefficient (default value = 0 A/V2)
EF: Forward Fowler-Nordheim critical electrical field (default value = 0 V/m)
ER: Reverse Fowler-Nordheim critical electrical field (default value = 0 V/m)
References: