.BondLib.Spice.Utilities.DjJ

Spice-style junction diode model for JFETs

Information

The Spice-style JFET junction diode is a regular exponential diode. 

Parameters:

 Level:  JFET modeling level (default value = 1)
           Level=1: Shichman-Hodges (Si) JFET model
           Level=2: Improved Shichman-Hodges (Si) JFET model [1]
           Level=3: Statz-Curtice (GaAs) MESFET model [2,3]

 IS:     Transport saturation current (default value = 1e-14 Amp)

 EG:     Energy gap for temperature effect on saturation current at 0 K
           default value = 1.11 Volt for Levels=1,2 (Si)
           default value = 0.73 Volt for Level=3 (GaAs)

 N:      Current emission coefficient (default value = 1)

 XTI:    Saturation current temperature exponent
           default value = 3 for Levels=1,2 (Si)
           default value = 2 for Level=3 (GaAs)

 Area:   Relative area occupied by the diode (default value = 1)

 EMin:   if x < EMin, the exp(x) function is linearized (default value = -100)

 EMax:   if x > EMax, the exp(x) function is linearized (default value = 40)

References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
  3. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
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