blockIDS0

Injected current between drain and source

Extends from Modelica.Blocks.Interfaces.SI2SO (2 Single Input / 1 Single Output continuous control block).

Information

The IDS0 block computes the drain-source current of a MOSFET. Depending on the modeling level, a different algorithm is being used. The equations for each of these algorithms are programmed in functions, called MOSeq1 .. MOSeq3 that implement the particular model in question. These functions have been carefully documented to make it easier on future developers to add additional models of their own by providing corresponding MOSeq_i functions.


Parameters:

 Level:   MOSFET modeling level (default value = 3)
            Level=0: Static injection model
            Level=1: Shichman-Hodges model
            Level=2: Grove-Frohman model
            Level=3: Empirical model
            Level=4: Simplified Grove-Frohman model

 Tnom:    Reference temperature (default value = 300.15 K) Levels 0-4

 VFB:     Flat band voltage (default value = 0 Volt) Levels 0-4

 KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 0-4

 GAMMA:   Body-effect parameter (default value = 0 Volt0.5) Levels 0-4

 PHI:     Surface inversion potential at reference temperature (default value = 0 Volt) Levels 0-4

 LAMBDA:  Channel length modulation  (default value = 0 1/Volt) Levels 0-4

 COX:     Specific capacitance of SiO2 (default value = 0 F/m2) Levels 2-4

 NFS:     Surface fast state density (default value = 0 1/m2) Levels 2-4

 NEFF:    Total channel charge coefficient (default value = 1) Levels 2,4

 XJ:      Metallurgical junction depth (default value = 0 m) Levels 2-4

 L:       Channel length (default value = 1e-4 m) Levels 0-4

 W:       Channel width (default value = 1e-4 m) Levels 0-4

 LD:      Lateral diffusion (default value = 0 m) Level 3

 XD:      Depletion factor (default value = 0 m/Volt0.5) Levels 2-4

 U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s)) Levels 2-4

 UEXP:    Exponential coefficient for mobility (default value = 0) Levels 2,4

 UTRA:    Transverse field coefficient (default value = 0) Levels 2,4

 VMAX:    Maximum drift velocity of carriers (default value = 0 m/s) Levels 2-4
            VMAX = 0: Frohman-Grove model of drain current computation (Levels 2,4)
            VMAX > 0: Baum-Beneking model of drain current computation (Levels 2,4)

 ECRIT:   Critical electric field for pinch-off (default value = 0 V/m) Levels 2,4

 DELTA:   Width effect on threshold voltage (default value = 0) Levels 2-4

 KAPPA:   Saturation field factor (default value = 0.2) Level 3

 ETA:     Static feedback on threshold voltage (default value = 0) Level 3

 THETA:   Mobility modulation (default value = 0 1/Volt) Level 3

 VBP:     Gate to channel critical voltage (default value = 0 Volt) Levels 2,4

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt) Levels 2,4

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 0-4

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 2-4

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 2-4

Parameters

TypeNameDefaultDescription
IntegerLevel3Level of MOS model (check documentation window for details)
IntegerType1Type=1 for NMOS; Type=-1 for PMOS
Modelica.SIunits.TemperatureTnom300.15Reference temperature
Modelica.SIunits.VoltageVFB0Flat band voltage
Modelica.SIunits.TransconductanceKP0Transconductance parameter at reference temperature
RealGAMMA0Body-effect parameter
Modelica.SIunits.VoltagePHI0Surface inversion potential at reference temperature
Modelica.SIunits.InversePotentialLAMBDA0Channel length modulation
RealCOX0Specific capacitance of SiO2
RealNFS0Surface fast state density
RealNEFF1Total channel charge coefficient
Modelica.SIunits.LengthXJ0Metallurgical junction depth
Modelica.SIunits.LengthL1e-4Channel length
Modelica.SIunits.LengthW1e-4Channel width
Modelica.SIunits.LengthLD0Lateral diffusion
RealXD0Depletion factor
RealU00.06Surface mobility at reference temperature
RealUEXP0Exponential coefficient for mobility
RealUTRA0Transverse field coefficient
Modelica.SIunits.VelocityVMAX0Maximum drift velocity of carriers
Modelica.SIunits.ElectricFieldStrengthECRIT0Critical electric field for pinch-off
RealDELTA0Width effect on threshold voltage
RealKAPPA0.2Saturation field factor
RealETA0Static feedback on threshold voltage
Modelica.SIunits.InversePotentialTHETA0Mobility modulation
Modelica.SIunits.VoltageVBP0Gate to channel critical voltage
Modelica.SIunits.VoltagePB0.8Built-in potential at reference temperature
Modelica.SIunits.VoltageEG1.11Energy gap for temperature effect on saturation current
RealEMin-100if x < EMin, the exp(x) function is linearized
RealEMax40if x > EMax, the exp(x) function is linearized

Connectors

TypeNameDefaultDescription
RealInputu1 (from SI2SO)Connector of Real input signal 1
RealInputu2 (from SI2SO)Connector of Real input signal 2
RealOutputy (from SI2SO)Connector of Real output signal
Modelica.Blocks.Interfaces.RealInputu3Connector of Real input signal 3
Modelica.Blocks.Interfaces.RealInputTdevDevice temperature
Modelica.Blocks.Interfaces.RealOutput[5]y1Connector of Real output signals

Components

TypeNameDefaultDescription
Modelica.SIunits.VoltagevdsDrain-source voltage
Modelica.SIunits.VoltagevgsGate-source voltage
Modelica.SIunits.VoltagevbsBulk-source voltage
Modelica.SIunits.CurrentidsInjected drain-source current
Modelica.SIunits.VoltageVfbFlat band voltage
Modelica.SIunits.VoltageVthThreshold voltage
Modelica.SIunits.VoltagevdsatSaturation voltage
Modelica.SIunits.Voltagevdsat1Adjusted saturation voltage
Modelica.SIunits.VoltagevpofPunch-through voltage