The IDS0 block computes the drain-source current of a MOSFET. Depending on the modeling level, a different algorithm is being used. The equations for each of these algorithms are programmed in functions, called MOSeq1 .. MOSeq3 that implement the particular model in question. These functions have been carefully documented to make it easier on future developers to add additional models of their own by providing corresponding MOSeq_i functions.
Parameters:
Level: MOSFET modeling level (default value = 3)
Level=0: Static injection model
Level=1: Shichman-Hodges model
Level=2: Grove-Frohman model
Level=3: Empirical model
Level=4: Simplified Grove-Frohman model
Tnom: Reference temperature (default value = 300.15 K) Levels 0-4
VFB: Flat band voltage (default value = 0 Volt) Levels 0-4
KP: Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 0-4
GAMMA: Body-effect parameter (default value = 0 Volt0.5) Levels 0-4
PHI: Surface inversion potential at reference temperature (default value = 0 Volt) Levels 0-4
LAMBDA: Channel length modulation (default value = 0 1/Volt) Levels 0-4
COX: Specific capacitance of SiO2 (default value = 0 F/m2) Levels 2-4
NFS: Surface fast state density (default value = 0 1/m2) Levels 2-4
NEFF: Total channel charge coefficient (default value = 1) Levels 2,4
XJ: Metallurgical junction depth (default value = 0 m) Levels 2-4
L: Channel length (default value = 1e-4 m) Levels 0-4
W: Channel width (default value = 1e-4 m) Levels 0-4
LD: Lateral diffusion (default value = 0 m) Level 3
XD: Depletion factor (default value = 0 m/Volt0.5) Levels 2-4
U0: Surface mobility at reference temperature (default value = 0 m2/(V*s)) Levels 2-4
UEXP: Exponential coefficient for mobility (default value = 0) Levels 2,4
UTRA: Transverse field coefficient (default value = 0) Levels 2,4
VMAX: Maximum drift velocity of carriers (default value = 0 m/s) Levels 2-4
VMAX = 0: Frohman-Grove model of drain current computation (Levels 2,4)
VMAX > 0: Baum-Beneking model of drain current computation (Levels 2,4)
ECRIT: Critical electric field for pinch-off (default value = 0 V/m) Levels 2,4
DELTA: Width effect on threshold voltage (default value = 0) Levels 2-4
KAPPA: Saturation field factor (default value = 0.2) Level 3
ETA: Static feedback on threshold voltage (default value = 0) Level 3
THETA: Mobility modulation (default value = 0 1/Volt) Level 3
VBP: Gate to channel critical voltage (default value = 0 Volt) Levels 2,4
PB: Built-in potential at reference temperature (default value = 0.8 Volt) Levels 2,4
EG: Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 0-4
EMin: if x < EMin, the exp(x) function is linearized (default value = -100) Levels 2-4
EMax: if x > EMax, the exp(x) function is linearized (default value = 40) Levels 2-4
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