blockIDS1
Injected current between drain and source of a JFET
Extends from Modelica.Blocks.Interfaces.SI2SO (2 Single Input / 1 Single Output continuous control block).
Information
The IDS1 block computes the drain-source current of JFETs and GaAs MESFETs. Depending on the modeling level, a different algorithm is being used. The equations for each of these algorithms are programmed in functions, called JFETeq1 .. JFETeq3 that implement the particular model in question. These functions have been carefully documented to make it easier on future developers to add additional models of their own by providing corresponding JFETeq_i functions.
Parameters:
Level: JFET modeling level (default value = 1)
Level=1: Shichman-Hodges (Si) JFET model
Level=2: Improved Shichman-Hodges (Si) JFET model [1]
Level=3: Statz-Curtice (GaAs) MESFET model [2,3]
Tnom: Reference temperature (default value = 300.15 K) Levels 1-3
VT0: Threshold voltage at reference temperature (default value = 0 Volt) Levels 1-3
BETA: Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 1-3
LAMBDA: Channel length modulation (default value = 0 1/Volt) Levels 1-3
TCV: Linear temperature coefficient of threshold voltage (default value = 0 Volt/K) Levels 1-3
BEX: Mobility temperature exponent (default value = 0) Levels 1-3
LAM1: Channel length modulation gate voltage parameter (default value = 0 1/Volt) Level 2
ALPHA: Hyperbolic tangient fitting parameter (default value = 1) Level 3
B: Measure of doping profile (default value = 0 1/Volt) Level 3
References:
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
- Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
- Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Integer | Level | 1 | JFET modeling level (check documentation layer for details) |
| Modelica.SIunits.Temperature | Tnom | 300.15 | Reference temperature |
| Modelica.SIunits.Voltage | VT0 | 0 | Threshold voltage at reference temperature |
| Modelica.SIunits.Transconductance | BETA | 0 | Transconductance parameter at reference temperature |
| Modelica.SIunits.InversePotential | LAMBDA | 0 | Channel length modulation |
| Real | TCV | 0 | Linear temperature coefficient of threshold voltage |
| Real | BEX | 0 | Mobility temperature exponent |
| Modelica.SIunits.InversePotential | LAM1 | 0 | Channel length modulation gate voltage parameter |
| Modelica.SIunits.InversePotential | ALPHA | 1 | Hyperbolic tangient fitting parameter |
| Modelica.SIunits.InversePotential | B | 0 | Measure of doping profile |
Connectors
| Type | Name | Default | Description |
|---|---|---|---|
| RealInput | u1 (from SI2SO) | Connector of Real input signal 1 | |
| RealInput | u2 (from SI2SO) | Connector of Real input signal 2 | |
| RealOutput | y (from SI2SO) | Connector of Real output signal | |
| Modelica.Blocks.Interfaces.RealInput | Tdev | Device temperature |
Components
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.SIunits.Voltage | vds | Drain-source voltage | |
| Modelica.SIunits.Voltage | vgs | Gate-source voltage | |
| Modelica.SIunits.Current | ids | Injected drain-source current | |
| Modelica.SIunits.Voltage | vdsat | Saturation voltage |