.BondLib.Spice.Utilities.IDS1

Injected current between drain and source of a JFET

Information

The IDS1 block computes the drain-source current of JFETs and GaAs MESFETs. Depending on the modeling level, a different algorithm is being used. The equations for each of these algorithms are programmed in functions, called JFETeq1 .. JFETeq3 that implement the particular model in question. These functions have been carefully documented to make it easier on future developers to add additional models of their own by providing corresponding JFETeq_i functions. 

Parameters:

 Level:   JFET modeling level (default value = 1)
            Level=1: Shichman-Hodges (Si) JFET model
            Level=2: Improved Shichman-Hodges (Si) JFET model [1]
            Level=3: Statz-Curtice (GaAs) MESFET model [2,3]

 Tnom:    Reference temperature (default value = 300.15 K) Levels 1-3

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt) Levels 1-3

 BETA:    Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 1-3

 LAMBDA:  Channel length modulation (default value = 0 1/Volt) Levels 1-3

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K) Levels 1-3

 BEX:     Mobility temperature exponent (default value = 0) Levels 1-3

 LAM1:    Channel length modulation gate voltage parameter (default value = 0 1/Volt) Level 2

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1) Level 3

 B:       Measure of doping profile (default value = 0 1/Volt) Level 3

References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
  3. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
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