The model comments the equations by providing the corresponding equation numbers from [1].
Input variables: vds: Drain-source voltage (Volt) vgs: Gate-source voltage (Volt) Tdev: Device temperature (K) sig: Indicator of operating mode sig = +1: direct mode sig = -1: reverse mode (source and drain are flipped) Input parameters: Tnom: Reference temperature (default value = 300.15 K) VT0: Threshold voltage at reference temperature (default value = 0 Volt) BETA: Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) LAMBDA: Channel length modulation (default value = 0 1/Volt) TCV: Linear temperature coefficient of threshold voltage (default value = 0 Volt/K) BEX: Mobility temperature exponent (default value = 0) LAM1: Channel length modulation gate voltage parameter (default value = 0 1/Volt) Output variables: isd0: Drain-source current (Amp) vdsat: Saturation voltage (Volt)
References:
function JFETeq2 input Modelica.SIunits.Voltage vds "Drain-source voltage"; input Modelica.SIunits.Voltage vgs "Gate-source voltage"; input Modelica.SIunits.Temperature Tdev "Device temperature"; input Real sig "sign(vds)"; input Modelica.SIunits.Temperature Tnom "Reference temperature"; input Modelica.SIunits.Voltage VT0 "Threshold voltage at reference temperature"; input Modelica.SIunits.Transconductance BETA "Transconductance parameter at reference temperature"; input Modelica.SIunits.InversePotential LAMBDA "Channel length modulation"; input Real TCV(unit = "V/K") "Linear temperature coefficient of threshold voltage"; input Real BEX "Mobility temperature exponent"; input Modelica.SIunits.InversePotential LAM1 "Channel length modulation gate voltage parameter"; output Modelica.SIunits.Current ids0 "Injected drain-source current"; output Modelica.SIunits.Voltage vdsat "Saturation voltage"; end JFETeq2;