functionJFETeq3

Computation of injected drain-source current of GaAs MESFET (Level = 3 JFET)

Information

This function implements a Spice-style Level-3 model of the current flowing between drain and source of a JFET. The Level-3 model of the JFET describes one type of a GaAs MESFET device. The theory behind the model is that proposed by Statz, et al [1].

The model comments the equations by providing the corresponding equation numbers from [2]. 

Input variables:

 vds:     Drain-source voltage (Volt)

 vgs:     Gate-source voltage (Volt)

 Tdev:    Device temperature (K)

 sig:     Indicator of operating mode
            sig = +1:  direct mode
            sig = -1:  reverse mode (source and drain are flipped)


Input parameters:

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt)

 BETA:    Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 LAMBDA:  Channel length modulation (default value = 0 1/Volt)

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K)

 BEX:     Mobility temperature exponent (default value = 0)

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1)

 B:       Measure of doping profile (default value = 0 1/Volt)


Output variables:

 isd0:    Drain-source current (Amp)

 vdsat:   Saturation voltage (Volt)

References:

  1. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York.

Inputs

TypeNameDefaultDescription
Modelica.SIunits.VoltagevdsDrain-source voltage
Modelica.SIunits.VoltagevgsGate-source voltage
Modelica.SIunits.TemperatureTdevDevice temperature
Realsigsign(vds)
Modelica.SIunits.TemperatureTnomReference temperature
Modelica.SIunits.VoltageVT0Threshold voltage at reference temperature
Modelica.SIunits.TransconductanceBETATransconductance parameter at reference temperature
Modelica.SIunits.InversePotentialLAMBDAChannel length modulation
RealTCVLinear temperature coefficient of threshold voltage
RealBEXMobility temperature exponent
Modelica.SIunits.InversePotentialALPHAHyperbolic tangient fitting parameter
Modelica.SIunits.InversePotentialBMeasure of doping profile

Outputs

TypeNameDefaultDescription
Modelica.SIunits.Currentids0Injected drain-source current
Modelica.SIunits.VoltagevdsatSaturation voltage