.BondLib.Spice.Utilities.JFETeq3

Information

The model comments the equations by providing the corresponding equation numbers from [2].

Input variables:

 vds:     Drain-source voltage (Volt)

 vgs:     Gate-source voltage (Volt)

 Tdev:    Device temperature (K)

 sig:     Indicator of operating mode
            sig = +1:  direct mode
            sig = -1:  reverse mode (source and drain are flipped)


Input parameters:

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt)

 BETA:    Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 LAMBDA:  Channel length modulation (default value = 0 1/Volt)

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K)

 BEX:     Mobility temperature exponent (default value = 0)

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1)

 B:       Measure of doping profile (default value = 0 1/Volt)


Output variables:

 isd0:    Drain-source current (Amp)

 vdsat:   Saturation voltage (Volt)

References:

1. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2^nd edition, McGraw Hill, New York.

Interface

function JFETeq3
  input Modelica.SIunits.Voltage vds "Drain-source voltage";
  input Modelica.SIunits.Voltage vgs "Gate-source voltage";
  input Modelica.SIunits.Temperature Tdev "Device temperature";
  input Real sig "sign(vds)";
  input Modelica.SIunits.Temperature Tnom "Reference temperature";
  input Modelica.SIunits.Voltage VT0 "Threshold voltage at reference temperature";
  input Modelica.SIunits.Transconductance BETA "Transconductance parameter at reference temperature";
  input Modelica.SIunits.InversePotential LAMBDA "Channel length modulation";
  input Real TCV(unit = "V/K") "Linear temperature coefficient of threshold voltage";
  input Real BEX "Mobility temperature exponent";
  input Modelica.SIunits.InversePotential ALPHA "Hyperbolic tangient fitting parameter";
  input Modelica.SIunits.InversePotential B "Measure of doping profile";
  output Modelica.SIunits.Current ids0 "Injected drain-source current";
  output Modelica.SIunits.Voltage vdsat "Saturation voltage";
end JFETeq3;