.BondLib.Spice.Utilities.MOSeq1

Information

This function implements a Spice-style Level-1 model of the current flowing between drain and source of a MOSFET in accrodance with the theory of Shichman and Hodges [1]. It is a simple model that computes the current in its linear and saturation regions only. No channel modulation effects are considered, and the current is set equal to zero in the subthreshold region of the device.

The current injection model is identical for Modelica-Spice Level-0 and Level-1.

The model comments the equations by providing the corresponding equation numbers from [2]. 

Input variables:

 vds:     Drain-source voltage (Volt)

 vgs:     Gate-source voltage (Volt)

 vbs:     Bulk-source voltage (Volt)

 Tdev:    Device temperature (K)

 sig:     Indicator of operating mode
            sig = +1:  direct mode
            sig = -1:  reverse mode (source and drain are flipped)


Input parameters:

 Type:    Type of MOSFET (default value = 1)
            Type = +1:  NMOS
            Type = -1:  PMOS

 Tnom:    Reference temperature (default value = 300.15 K)

 VFB:     Flat band voltage at reference temperature (default value = 0 Volt)

 KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 GAMMA:   Body-effect parameter (default value = 0 Volt0.5)

 PHI:     Surface inversion potential at reference temperature (default value = 0 Volt)

 LAMBDA:  Channel length modulation  (default value = 0 1/Volt)

 L:       Channel length (default value = 1e-4 m)

 W:       Channel width (default value = 1e-4 m)

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)


Output variables:

 isd0:    Drain-source current (Amp)

 Vfb:     Flat band voltage at device temperature (Volt)

 Vth:     Threshold voltage (Volt)

 vdsat:   Saturation voltage (Volt)

References:

  1. Shichman, H. and D.A. Hodges (1968), "Modeling and Simulation of Insulated-Gate Field-Effector Transistor Switching Circuits," IEEE J. Solid-State Circuits, 3(3), pp. 285-289.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York.

Interface

function MOSeq1
  input Modelica.SIunits.Voltage vds "Drain-source voltage";
  input Modelica.SIunits.Voltage vgs "Gate-source voltage";
  input Modelica.SIunits.Voltage vbs "Bulk-source voltage";
  input Modelica.SIunits.Temperature Tdev "Device temperature";
  input Real sig "sign(vds)";
  input Integer Type "Type=1 for NMOS; Type=-1 for PMOS";
  input Modelica.SIunits.Temperature Tnom "Reference temperature";
  input Modelica.SIunits.Voltage VFB "Flat band voltage at reference temperature";
  input Modelica.SIunits.Transconductance KP "Transconductance parameter at reference temperature";
  input Real GAMMA(unit = "V^0.5") "Body-effect parameter";
  input Modelica.SIunits.Voltage PHI "Surface inversion potential at reference temperature";
  input Modelica.SIunits.InversePotential LAMBDA "Channel length modulation";
  input Modelica.SIunits.Length L "Effective hannel length";
  input Modelica.SIunits.Length W "Effective channel width";
  input Modelica.SIunits.Voltage EG "Energy gap for temperature effect on saturation current at 0 K";
  output Modelica.SIunits.Current ids0 "Injected drain-source current";
  output Modelica.SIunits.Voltage Vfb "Flat band voltage at device temperature";
  output Modelica.SIunits.Voltage Vth "Threshold voltage";
  output Modelica.SIunits.Voltage vdsat "Saturation voltage";
end MOSeq1;
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