functionMOSeq2

Information

The model simulates very slowly, and is probably not useful except for simulating across a single switching event.

The model comments the equations by providing the corresponding equation numbers from [4].

Input variables:

 vds:     Drain-source voltage (Volt)

 vgs:     Gate-source voltage (Volt)

 vbs:     Bulk-source voltage (Volt)

 Tdev:    Device temperature (K)

 sig:     Indicator of operating mode
            sig = +1:  direct mode
            sig = -1:  reverse mode (source and drain are flipped)


Input parameters:

 Type:    Type of MOSFET (default value = 1)
            Type = +1:  NMOS
            Type = -1:  PMOS

 Tnom:    Reference temperature (default value = 300.15 K)

 VFB:     Flat band voltage at reference temperature (default value = 0 Volt)

 KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 GAMMA:   Body-effect parameter (default value = 0 Volt0.5)

 PHI:     Surface inversion potential at reference temperature (default value = 0 Volt)

 LAMBDA:  Channel length modulation  (default value = 0 1/Volt)

 COX:     Specific capacitance of SiO2 (default value = 0 F/m2)

 NFS:     Surface fast state density (default value = 0 1/m2)

 NEFF:    Total channel charge coefficient (default value = 1)

 XJ:      Metallurgical junction depth (default value = 0 m)

 L:       Channel length (default value = 1e-4 m)

 W:       Channel width (default value = 1e-4 m)

 XD:      Depletion factor (default value = 0 m/Volt0.5)

 U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s))

 UEXP:    Exponential coefficient for mobility (default value = 0)

 UTRA:    Transverse field coefficient (default value = 0)

 VMAX:    Maximum drift velocity of carriers (default value = 0 m/s)
            VMAX = 0: Frohman-Grove model of drain current computation
            VMAX > 0: Baum-Beneking model of drain current computation

 ECRIT:   Critical electric field for pinch-off (default value = 0 V/m)

 DELTA:   Width effect on threshold voltage (default value = 0)

 VBP:     Gate to channel critical voltage (default value = 0 Volt)

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1-3

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1-3


Output variables:

 isd0:    Drain-source current (Amp)

 Vfb:     Flat band voltage at device temperature (Volt)

 Vth:     Threshold voltage (Volt)

 vdsat:   Saturation voltage (Volt)

 vdsat1:  Adjusted saturation voltage (Volt)

 vpof:    Pinch-off voltage (Volt)

References:

1. Frohman-Bentchkowsky, D. (1968), "On the Effect of Mobility Variation on MOS Device Characteristics," Proc. IEEE, 56, pp.217-218.
2. Frohman-Bentchkowsky, D. and A.S. Grove (1969), "Conductance of MOS Transistors in Saturation," IEEE Trans. Electron Devices, ED-16, pp. 108-113.
3. Baum, G. and H. Beneking (1970), "Drift Velocity Saturation in MOS Transistors," IEEE Trans. Electron Devices, ED-17, pp. 481-482.
4. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2^nd edition, McGraw Hill, New York.

Inputs

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