functionMOSeq3

Information

The model offers a compromise between the much more sophisticated Level-2 model that, however, simulates very slowly, and the often too simple Level-1 model that doesn't allow many questions to be answered, such as what is the highest possible switching frequency reachable, how much power is being dissipated at high frequency operation, what is the amount of substrate cross-talk, etc.

The model comments the equations by providing the corresponding equation numbers from [1].

Input variables:

 vds:     Drain-source voltage (Volt)

 vgs:     Gate-source voltage (Volt)

 vbs:     Bulk-source voltage (Volt)

 Tdev:    Device temperature (K)

 sig:     Indicator of operating mode
            sig = +1:  direct mode
            sig = -1:  reverse mode (source and drain are flipped)


Input parameters:

 Type:    Type of MOSFET (default value = 1)
            Type = +1:  NMOS
            Type = -1:  PMOS

 Tnom:    Reference temperature (default value = 300.15 K)

 VFB:     Flat band voltage at reference temperature (default value = 0 Volt)

 KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 GAMMA:   Body-effect parameter (default value = 0 Volt0.5)

 PHI:     Surface inversion potential at reference temperature (default value = 0 Volt)

 COX:     Specific capacitance of SiO2 (default value = 0 F/m2)

 NFS:     Surface fast state density (default value = 0 1/m2)

 XJ:      Metallurgical junction depth (default value = 0 m)

 L:       Channel length (default value = 1e-4 m)

 W:       Channel width (default value = 1e-4 m)

 LD:      Lateral diffusion (default value = 0 m)

 XD:      Depletion factor (default value = 0 m/Volt0.5)

 U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s))

 VMAX:    Maximum drift velocity of carriers (default value = 0 m/s)

 DELTA:   Width effect on threshold voltage (default value = 0)

 KAPPA:   Saturation field factor (default value = 0.2)

 ETA:     Static feedback on threshold voltage (default value = 0)

 THETA:   Mobility modulation (default value = 0 1/Volt)

 EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1-3

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1-3


Output variables:

 isd0:    Drain-source current (Amp)

 Vfb:     Flat band voltage at device temperature (Volt)

 Vth:     Threshold voltage (Volt)

 vdsat:   Saturation voltage (Volt)

 vpof:    Pinch-off voltage (Volt)

References:

1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2^nd edition, McGraw Hill, New York.

Inputs

Outputs