modelPFETint

Spice-style internal p-channel JFET in bond graph technology

Information

The Spice-style internal p-channel JFET model contains the non-linear current source and the two junction diodes (including the junctions capacitances).


Parameters:

 Level:   JFET modeling level (default value = 1)
            Level=1: Shichman-Hodges (Si) JFET model
            Level=2: Improved Shichman-Hodges (Si) JFET model [1]
            Level=3: Statz-Curtice (GaAs) MESFET model [2,3]

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt)
            VT0 > 0 for enhancement JFET
            VT0 < 0 for depletion JFET

 IS:      Transport saturation current (default value = 1e-14 Amp)

 BETA:    Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 LAMBDA:  Channel length modulation (default value = 0 1/Volt)

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K)

 EG:      Energy gap for temperature effect on saturation current at 0 K
            default value = 1.11 Volt for Levels=1,2 (Si)
            default value = 0.73 Volt for Level=3 (GaAs)

 N:       Current emission coefficient (default value = 1)

 XTI:     Saturation current temperature exponent
            default value = 3 for Levels=1,2 (Si)
            default value = 2 for Level=3 (GaAs)

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

 CGS:     Zero-bias gate-source depletion capacitance at reference temperature (default value = 0.5e-12 F)

 CGD:     Zero-bias gate-drain depletion capacitance at reference temperature (default value = 0.5e-12 F)

 M:       Junction grading coefficient
            default value = 0.33 for Levels=1,2 (Si)
            default value = 0.5  for Level=3 (GaAs)

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5)

 TT:      Ideal transit time (default value = 5e-9 sec)

 BEX:     Mobility temperature exponent (default value = 0)

 LAM1:    Channel length modulation gate voltage parameter (default value = 0 1/Volt)

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1)

 B:       Measure of doping profile (default value = 0 1/Volt)

 DELTA:   Voltage range for transition (default value = 0.2 Volt)

 VMAX:    Limit voltage for carrier velocity saturation (default value = 0.5 Volt)

 GminDC:  Leakage conductance (default value = 1e-15 Mho)

 Area:    Relative area occupied by the diode (default value = 1)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)


References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
  3. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.

Parameters

TypeNameDefaultDescription
IntegerLevel1JFET modeling level (check documentation layer for details)
Modelica.SIunits.TemperatureTnom300.15Reference temperature
Modelica.SIunits.VoltageVT00Threshold voltage at reference temperature
Modelica.SIunits.CurrentIS1.e-14Transport saturation current at reference temperature
Modelica.SIunits.TransconductanceBETA0Transconductance parameter at reference temperature
Modelica.SIunits.InversePotentialLAMBDA0Channel length modulation
RealTCV0Linear temperature coefficient of threshold voltage
Modelica.SIunits.VoltageEGif Level == 3 then 0.73 else 1.11Energy gap for temperature effect on saturation current at 0 K
RealN1Current emission coefficient
RealXTIif Level == 3 then 2 else 3Saturation current temperature exponent
Modelica.SIunits.VoltagePB0.8Built-in potential at reference temperature
Modelica.SIunits.CapacitanceCGS0.5e-12Zero-bias gate-source depletion capacitance at reference temperature
Modelica.SIunits.CapacitanceCGD0.5e-12Zero-bias gate-drain depletion capacitance at reference temperature
RealMif Level == 3 then 0.5 else 0.33Junction grading coefficient
RealFC0.5Factor for linearization of depletion capacitance formula
Modelica.SIunits.TimeTT5e-9Ideal transit time
RealBEX0Mobility temperature exponent
Modelica.SIunits.InversePotentialLAM10Channel length modulation gate voltage parameter
Modelica.SIunits.InversePotentialALPHA1Hyperbolic tangient fitting parameter
Modelica.SIunits.InversePotentialB0Measure of doping profile
Modelica.SIunits.VoltageDELTA0.2Voltage range for transition
Modelica.SIunits.VoltageVMAX0.5Limit voltage for carrier velocity saturation
Modelica.SIunits.ConductanceGminDC1e-16Leakage conductance
RealArea1Relative area occupied by capacitor
RealEMin-100if x < EMin, the exp(x) function is linearized
RealEMax40if x > EMax, the exp(x) function is linearized

Components

TypeNameDefaultDescription
BondLib.Interfaces.BondConGintInternal gate
BondLib.Interfaces.BondConHHeat
BondLib.Interfaces.BondConDintInternal drain
BondLib.Interfaces.BondConSintInternal source
BondLib.Junctions.J0p3J0p3_1
BondLib.Junctions.J0p5J0p5_1
BondLib.Junctions.J1p3J1p3_1
BondLib.Bonds.BondB1
BondLib.Bonds.BondB2
BondLib.Junctions.J0p3J0p3_2
BondLib.Junctions.J0p3J0p3_3
BondLib.Bonds.BondB3
BondLib.Junctions.J0p3J0p3_4
BondLib.Bonds.eBondB4
BondLib.Sources.mSf_intIsd
BondLib.Bonds.fBondB5
BondLib.Bonds.fBondB6
BondLib.Sensors.DeTdev
BondLib.Bonds.fBondB7
BondLib.Sensors.Devsd
BondLib.Spice.Utilities.IDS1ISD
BondLib.Bonds.BondB8
BondLib.Junctions.J1p3J1p3_2
BondLib.Bonds.BondB9
BondLib.Bonds.BondB10
BondLib.Spice.Utilities.CjJDdg
BondLib.Bonds.eBondB11
BondLib.Bonds.BondB12
BondLib.Junctions.J1p3J1p3_3
BondLib.Bonds.BondB13
BondLib.Bonds.BondB14
BondLib.Junctions.J0p3J0p3_5
BondLib.Bonds.BondB15
BondLib.Spice.Utilities.CjJDsg
BondLib.Bonds.eBondB16
BondLib.Bonds.fBondB17
BondLib.Sensors.Devsg
Modelica.Blocks.Math.GainGain1