.BondLib.Spice.Utilities.PFETint

Spice-style internal p-channel JFET in bond graph technology

Information

The Spice-style internal p-channel JFET model contains the non-linear current source and the two junction diodes (including the junctions capacitances). 

Parameters:

 Level:   JFET modeling level (default value = 1)
            Level=1: Shichman-Hodges (Si) JFET model
            Level=2: Improved Shichman-Hodges (Si) JFET model [1]
            Level=3: Statz-Curtice (GaAs) MESFET model [2,3]

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Threshold voltage at reference temperature (default value = 0 Volt)
            VT0 > 0 for enhancement JFET
            VT0 < 0 for depletion JFET

 IS:      Transport saturation current (default value = 1e-14 Amp)

 BETA:    Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 LAMBDA:  Channel length modulation (default value = 0 1/Volt)

 TCV:     Linear temperature coefficient of threshold voltage (default value = 0 Volt/K)

 EG:      Energy gap for temperature effect on saturation current at 0 K
            default value = 1.11 Volt for Levels=1,2 (Si)
            default value = 0.73 Volt for Level=3 (GaAs)

 N:       Current emission coefficient (default value = 1)

 XTI:     Saturation current temperature exponent
            default value = 3 for Levels=1,2 (Si)
            default value = 2 for Level=3 (GaAs)

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

 CGS:     Zero-bias gate-source depletion capacitance at reference temperature (default value = 0.5e-12 F)

 CGD:     Zero-bias gate-drain depletion capacitance at reference temperature (default value = 0.5e-12 F)

 M:       Junction grading coefficient
            default value = 0.33 for Levels=1,2 (Si)
            default value = 0.5  for Level=3 (GaAs)

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5)

 TT:      Ideal transit time (default value = 5e-9 sec)

 BEX:     Mobility temperature exponent (default value = 0)

 LAM1:    Channel length modulation gate voltage parameter (default value = 0 1/Volt)

 ALPHA:   Hyperbolic tangient fitting parameter (default value = 1)

 B:       Measure of doping profile (default value = 0 1/Volt)

 DELTA:   Voltage range for transition (default value = 0.2 Volt)

 VMAX:    Limit voltage for carrier velocity saturation (default value = 0.5 Volt)

 GminDC:  Leakage conductance (default value = 1e-15 Mho)

 Area:    Relative area occupied by the diode (default value = 1)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)

References:

  1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.153.
  2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.382.
  3. Statz, H., P. Newman, I.W. Smith, R.A. Pucel, and H.A. Hans (1987), "GaAs FET Device and Circuit Simulation in Spice," IEEE Trans. Electron Devices, 34(2), pp. 160-169.
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