Potential variables: e: Bondgraphic effort variable f: Bondgraphic flow variable, normalized positive for flows into the model Cdiff: Diffusion capacitance (modulating input signal) Cdepl: Depletion capacitance (modulating input signal) ix: External depletion capacitive current Parameters: XCJC: Fraction of depletion capacitance connected to internal base node (default value = 1) Level: Transistor modeling level (Ebers-Moll = 1; Gummel-Poon = 2) (default value = 2)
Equations:
C = Cdiff + XCJ*Cdepl;
du = f/C;
ix = (1 - XCJ)*Cdepl*du;
der(e) = du;