blocknlCD
Non-linear capacitance computation of DIODE
Extends from Modelica.Blocks.Interfaces.SISO (Single Input Single Output continuous control block).
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Modelica.SIunits.Permittivity | e0 | Modelica.Constants.epsilon_0 | Permittivity of free space |
| Modelica.SIunits.Entropy | k | Modelica.Constants.k | Boltzmann's constant |
| Modelica.SIunits.ElectricCharge | q | 1.6021892e-19 | Electron charge |
| Real | GapC1 | 7.02E-4 | First bandgap correction factor Silicon |
| Modelica.SIunits.Temperature | GapC2 | 1108.0 | Second bandgap correction factor Silicon |
| Real | kox | 3.9 | Dielectric constant of SiO2 |
| Integer | Level | 1 | DIODE modeling level (check documentation window for details) |
| Modelica.SIunits.Temperature | Tnom | 300.15 | Reference temperature |
| Real | Area | 1 | Relative device area |
| Real | PJ | 1 | Relative perimeter width |
| Integer | M | 1 | Diode multiplier |
| Modelica.SIunits.Current | IS | 1e-14 | Saturation current at reference temperature |
| Modelica.SIunits.CurrentDensity | JS | 1e-4 | Saturation current density at reference temperature |
| Real | N | 1 | Current emission coefficient |
| Modelica.SIunits.Time | TT | 0 | Transit time at reference temperature |
| Modelica.SIunits.Voltage | PB | 0.8 | Built-in junction potential at reference temperature |
| Modelica.SIunits.Voltage | PHP | 0.8 | Built-in perimeter potential at reference temperature |
| Modelica.SIunits.Capacitance | CJ | 0.5e-12 | Zero-bias bulk capacitance at reference temperature |
| Real | CJ2 | 1e-4 | Zero-bias bulk capacitance per square meter at reference temperature |
| Real | MJ | 0.33 | Bulk junction grading coefficient |
| Modelica.SIunits.Capacitance | CJSW | 0.5e-12 | Zero-bias perimeter capacitance at reference temperature |
| Real | CJSW2 | 1e-9 | Zero-bias perimeter capacitance per meter at reference temperature |
| Real | MJSW | 0.33 | Perimeter capacitance grading coefficient |
| Real | FC | 0.5 | Forward-bias depletion capacitance coefficient |
| Modelica.SIunits.Conductance | GminDC | 1e-16 | Leakage conductance |
| Modelica.SIunits.Voltage | EG | 1.11 | Energy gap for temperature effect on saturation current at 0 K |
| Real | XTI | 3 | Saturation current temperature exponent |
| Real | TTT1 | 0 | Linear temperature coefficient of transit time |
| Real | TTT2 | 0 | Quadratic temperature coefficient of transit time |
| Modelica.SIunits.Current | ISW | 0 | Saturation current of periphery at reference temperature |
| Real | JSW | 0 | Saturation current density of periphery at reference temperature |
| Modelica.SIunits.Length | TOX | 1e-7 | Thin oxide thickness |
| Modelica.SIunits.Length | L | 0 | Diode length |
| Modelica.SIunits.Length | W | 0 | Diode width |
| Modelica.SIunits.Length | LP | 0 | Polysilicon length |
| Modelica.SIunits.Length | WP | 0 | Polysilicon width |
| Modelica.SIunits.Length | XP | 0 | Widening of polysilicon due to masking and etching |
| Modelica.SIunits.Length | XOI | 0 | Polysilicon thickness |
| Modelica.SIunits.Length | LM | 0 | Metal length |
| Modelica.SIunits.Length | WM | 0 | Metal width |
| Modelica.SIunits.Length | XM | 0 | Widening of metal due to masking and etching |
| Modelica.SIunits.Length | XOM | 0 | Metal thickness |
| Real | EMin | -100 | if x < EMin, the exp(x) function is linearized |
| Real | EMax | 40 | if x > EMax, the exp(x) function is linearized |
Connectors
| Type | Name | Default | Description |
|---|---|---|---|
| RealInput | u (from SISO) | Connector of Real input signal | |
| RealOutput | y (from SISO) | Connector of Real output signal | |
| Modelica.Blocks.Interfaces.RealInput | Tdev | Device temperature |