The real diode model consists of the diode itself and an parallel Ohmic resistance R. The diode formula essentially is:
f = Ids*(exp(e/Vt) - 1)
However, if the exponent e/Vt reaches the limit Maxexp, the diode characterisic is linearly continued to avoid overflow.
The diode source element is a bit more complex than the diode element, because it not only computes the heat flow, but also the temperature dependence of the diode characteristic.
The resistive source element has free causality on the primary side, and fixed causality on the secondary side. The causality stroke is at the element on the secondary side (a source of entropy, rather than a source of temperature).
Potential variables: e1: Bondgraphic effort variable of inflow f1: Bondgraphic flow variable of inflow, normalized positive for flows into the model e2: Bondgraphic effort variable of outflow f2: Bondgraphic flow variable of outflow, normalized positive for flows out of the model Vt: Thermal voltage Parameters: Ids: Saturation current (default value = 1e-6 Amp) Maxexp: Maximum exponent (default value = 15) R: Parallel Ohmic leakage resistance (default value = 1e8 Ohm) EG: Activation energy (default value = 1.11 J) N: Emission coefficient (default value = 1) TNOM: Nominal temperature (default value = 300.15 K) XTI: Temperature exponent of saturation current (default value = 3)
Equations:
Vt = k*e2/q
dchar = exlin((v/(N*Vt)), Maxexp) - 1
tdep = exp((e2/TNOM - 1)*EG/(N*Vt))*pow(e2/TNOM, XTI/N)
f1 = Ids*tdep*dchar + e1/R
f2 = (e1/e2)*f1