recordModelcardBJT

Record for the specification of modelcard parameters

Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardBJT2 (Record with technology parameters (.model)).

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the modified Gummel-Poon bipolar junction transistor model

Parameters

TypeNameDefaultDescription
Modelica.Units.NonSI.Temperature_degCTNOM (from ModelcardBJT2)27Parameter measurement temperature
SI.CurrentIS (from ModelcardBJT2)1e-16Transport saturation current
RealBF (from ModelcardBJT2)100.00Ideal maximum forward beta F
RealNF (from ModelcardBJT2)1.0Forward current emission coefficientF
RealNE (from ModelcardBJT2)1.5B-E leakage emission coefficient
SI.CurrentISE (from ModelcardBJT2)-1e40B-E leakage saturation current, default = 0
RealC2 (from ModelcardBJT2)-1e40Obsolete parameter name, default = 0
SI.CurrentISC (from ModelcardBJT2)-1e40B-C leakage saturation current, default = 0
RealC4 (from ModelcardBJT2)-1e40Obsolete parameter name, default = 0
RealBR (from ModelcardBJT2)1.0Ideal maximum reverse beta
RealNR (from ModelcardBJT2)1.0Reverse current emission coefficient
RealNC (from ModelcardBJT2)2.0B-C leakage emission coefficient
SI.VoltageVAF (from ModelcardBJT2)0.0Forward Early voltage
SI.CurrentIKF (from ModelcardBJT2)0.0Forward beta roll-off corner current
SI.VoltageVAR (from ModelcardBJT2)0.0Reverse Early voltage
SI.CurrentIKR (from ModelcardBJT2)0.0Reverse beta roll-off corner current
SI.ResistanceRE (from ModelcardBJT2)0.0Emitter resistance
SI.ResistanceRC (from ModelcardBJT2)0.0Collector resistance
SI.CurrentIRB (from ModelcardBJT2)0.0Current for base resistance = (rb+rbm)/2
SI.ResistanceRB (from ModelcardBJT2)0.0Zero bias base resistance
SI.ResistanceRBM (from ModelcardBJT2)0.0Minimum base resistance, default = 0.0
Types.CapacitanceCJE (from ModelcardBJT2)0.0Zero bias B-E depletion capacitance
SI.VoltageVJE (from ModelcardBJT2)0.75B-E built in potential
RealMJE (from ModelcardBJT2)0.33B-E junction exponential factor
SI.TimeTF (from ModelcardBJT2)0.0Ideal forward transit time
RealXTF (from ModelcardBJT2)0.0Coefficient for bias dependence of TF
SI.CurrentITF (from ModelcardBJT2)0.0High current dependence of TF,
SI.VoltageVTF (from ModelcardBJT2)0.0Voltage giving VBC dependence of TF
SI.FrequencyPTF (from ModelcardBJT2)0.0Excess phase at freq=1/(TF*2*Pi) Hz
Types.CapacitanceCJC (from ModelcardBJT2)0.0Zero bias B-C depletion capacitance
SI.VoltageVJC (from ModelcardBJT2)0.75B-C built in potential
RealMJC (from ModelcardBJT2)0.33B-C junction grading coefficient
RealXCJC (from ModelcardBJT2)1.0Fraction of B-C cap to internal base
SI.TimeTR (from ModelcardBJT2)0.0Ideal reverse transit time
Types.CapacitanceCJS (from ModelcardBJT2)0.0Zero bias C-S capacitance
SI.VoltageVJS (from ModelcardBJT2)0.75Substrate junction built-in potential
RealMJS (from ModelcardBJT2)0.0Substrate junction grading coefficient
RealXTB (from ModelcardBJT2)0.0Forward and reverse beta temperature exponent
SI.GapEnergyEG (from ModelcardBJT2)1.11Energy gap for IS temperature effect on IS
RealXTI (from ModelcardBJT2)3.0Temperature exponent for IS
RealKF (from ModelcardBJT2)0.0Flicker Noise Coefficient
RealAF (from ModelcardBJT2)1.0Flicker Noise Exponent
RealFC (from ModelcardBJT2)0.5Forward bias junction fit parameter