recordModelcardMOS
Record for the specification of modelcard parameters
Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardMOS (Record with technology parameters (.model)).
Information
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| SI.Voltage | VTO (from ModelcardMOS) | -1e40 | Zero-bias threshold voltage, default 0 |
| SI.Transconductance | KP (from ModelcardMOS) | -1e40 | Transconductance parameter, default 2e-5 |
| Real | GAMMA (from ModelcardMOS) | -1e40 | Bulk threshold parameter, default 0 |
| SI.Voltage | PHI (from ModelcardMOS) | -1e40 | Surface potential, default 0.6 |
| SI.InversePotential | LAMBDA (from ModelcardMOS) | 0 | Channel-length modulation, default 0 |
| SI.Resistance | RD (from ModelcardMOS) | -1e40 | Drain ohmic resistance, default 0 |
| SI.Resistance | RS (from ModelcardMOS) | -1e40 | Source ohmic resistance, default 0 |
| Types.Capacitance | CBD (from ModelcardMOS) | -1e40 | Zero-bias B-D junction capacitance, default 0 |
| Types.Capacitance | CBS (from ModelcardMOS) | -1e40 | Zero-bias B-S junction capacitance, default 0 |
| SI.Current | IS (from ModelcardMOS) | 1e-14 | Bulk junction saturation current |
| SI.Voltage | PB (from ModelcardMOS) | 0.8 | Bulk junction potential |
| SI.Permittivity | CGSO (from ModelcardMOS) | 0.0 | Gate-source overlap capacitance per meter channel width |
| SI.Permittivity | CGDO (from ModelcardMOS) | 0.0 | Gate-drain overlap capacitance per meter channel width |
| SI.Permittivity | CGBO (from ModelcardMOS) | 0.0 | Gate-bulk overlap capacitance per meter channel width |
| SI.Resistance | RSH (from ModelcardMOS) | 0.0 | Drain and source diffusion sheet resistance |
| SI.CapacitancePerArea | CJ (from ModelcardMOS) | 0.0 | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
| Real | MJ (from ModelcardMOS) | 0.5 | Bulk junction bottom grading coefficient |
| SI.Permittivity | CJSW (from ModelcardMOS) | 0.0 | Zero-bias junction sidewall cap. per meter of junction perimeter |
| Real | MJSW (from ModelcardMOS) | 0.5 | Bulk junction sidewall grading coefficient |
| SI.CurrentDensity | JS (from ModelcardMOS) | 0.0 | Bulk junction saturation current per sq-meter of junction area |
| SI.Length | TOX (from ModelcardMOS) | -1e40 | Oxide thickness, default 1e-7 |
| Real | NSUB (from ModelcardMOS) | -1e40 | Substrate doping, default 0 |
| Modelica.Units.NonSI.PerArea_cm | NSS (from ModelcardMOS) | 0.0 | Surface state density |
| Real | TPG (from ModelcardMOS) | 1.0 | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
| SI.Length | LD (from ModelcardMOS) | 0.0 | Lateral diffusion |
| Modelica.Units.NonSI.Area_cmPerVoltageSecond | UO (from ModelcardMOS) | 600 | Surface mobility |
| Real | KF (from ModelcardMOS) | 0 | Flicker noise coefficient |
| Real | AF (from ModelcardMOS) | 1.0 | Flicker noise exponent |
| Real | FC (from ModelcardMOS) | 0.5 | Coefficient for forward-bias depletion capacitance formula |
| Modelica.Units.NonSI.Temperature_degC | TNOM (from ModelcardMOS) | 27 | Parameter measurement temperature, default 27 |
| Integer | LEVEL (from ModelcardMOS) | 1 | Model level: Shichman-Hodges |