recordModelcardMOS2

Record for the specification of modelcard parameters

Extends from Modelica.Icons.Record (Icon for records), Modelica.Electrical.Spice3.Internal.ModelcardMOS2 (Record with technology parameters (.model)).

Information

Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters

TypeNameDefaultDescription
SI.VoltageVTO (from ModelcardMOS)-1e40Zero-bias threshold voltage, default 0
SI.TransconductanceKP (from ModelcardMOS)-1e40Transconductance parameter, default 2e-5
RealGAMMA (from ModelcardMOS)-1e40Bulk threshold parameter, default 0
SI.VoltagePHI (from ModelcardMOS)-1e40Surface potential, default 0.6
SI.InversePotentialLAMBDA (from ModelcardMOS)0Channel-length modulation, default 0
SI.ResistanceRD (from ModelcardMOS)-1e40Drain ohmic resistance, default 0
SI.ResistanceRS (from ModelcardMOS)-1e40Source ohmic resistance, default 0
Types.CapacitanceCBD (from ModelcardMOS)-1e40Zero-bias B-D junction capacitance, default 0
Types.CapacitanceCBS (from ModelcardMOS)-1e40Zero-bias B-S junction capacitance, default 0
SI.CurrentIS (from ModelcardMOS)1e-14Bulk junction saturation current
SI.VoltagePB (from ModelcardMOS)0.8Bulk junction potential
SI.PermittivityCGSO (from ModelcardMOS)0.0Gate-source overlap capacitance per meter channel width
SI.PermittivityCGDO (from ModelcardMOS)0.0Gate-drain overlap capacitance per meter channel width
SI.PermittivityCGBO (from ModelcardMOS)0.0Gate-bulk overlap capacitance per meter channel width
SI.ResistanceRSH (from ModelcardMOS)0.0Drain and source diffusion sheet resistance
SI.CapacitancePerAreaCJ (from ModelcardMOS)0.0Zero-bias bulk junction bottom cap. per sq-meter of junction area
RealMJ (from ModelcardMOS)0.5Bulk junction bottom grading coefficient
SI.PermittivityCJSW (from ModelcardMOS)0.0Zero-bias junction sidewall cap. per meter of junction perimeter
RealMJSW (from ModelcardMOS)0.5Bulk junction sidewall grading coefficient
SI.CurrentDensityJS (from ModelcardMOS)0.0Bulk junction saturation current per sq-meter of junction area
SI.LengthTOX (from ModelcardMOS)-1e40Oxide thickness, default 1e-7
RealNSUB (from ModelcardMOS)-1e40Substrate doping, default 0
Modelica.Units.NonSI.PerArea_cmNSS (from ModelcardMOS)0.0Surface state density
RealTPG (from ModelcardMOS)1.0Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
SI.LengthLD (from ModelcardMOS)0.0Lateral diffusion
Modelica.Units.NonSI.Area_cmPerVoltageSecondUO (from ModelcardMOS)600Surface mobility
RealKF (from ModelcardMOS)0Flicker noise coefficient
RealAF (from ModelcardMOS)1.0Flicker noise exponent
RealFC (from ModelcardMOS)0.5Coefficient for forward-bias depletion capacitance formula
Modelica.Units.NonSI.Temperature_degCTNOM (from ModelcardMOS)27Parameter measurement temperature, default 27
IntegerLEVEL (from ModelcardMOS)1Model level: Shichman-Hodges
Modelica.Units.NonSI.PerArea_cmNFS (from ModelcardMOS2)0.0Fast surface state density
SI.LengthXJ (from ModelcardMOS2)0.0Metallurgical junction depth
Types.ElectricFieldStrength_cmUCRIT (from ModelcardMOS2)1e4Critical field for mobility degradation (MOS2 only)
RealUEXP (from ModelcardMOS2)0.0Critical field exponent in mobility degradation (MOS2 only)
SI.VelocityVMAX (from ModelcardMOS2)0.0Maximum drift velocity of carries
RealNEFF (from ModelcardMOS2)1.0Total channel charge (fixed and mobile) coefficient (MOS2 only)
RealDELTA (from ModelcardMOS2)0.0Width effect on threshold voltage