.PowerSystems.Semiconductors.Ideal.SCparameter

Ideal semiconductor parameters

Information

The small parameters epsR and epsG are given in dimensionless units. This allows to work with deault values also in cases where the exact semiconductor data are missing. A resonable (approximate) value for Z_nom is needed for scaling.

  epsR = (dV/dI)/Z_nom at I_nom
  Z_nom = V_nom/I_nom

Thermal losses are proportional to the forward drop voltage V, which may depend on temperature.
The temperature dependence is given by

  V(T) = Vf*(1 + cT[1]*(T - T0) + cT[2]*(T - T0)^2 + ...)

where Vf denotes the parameter value. With input cT empty, no temperature dependence of losses is calculated.

The switching losses are approximated by

  h = hSw_nom*v*i/S_nom,   S_nom = V_nom*I_nom

where q denotes the dissipated heat per switching operation at nominal voltage and current, averaged over 'on' and 'off'.
A generalisation to powers of i and v is straightforward.

Generated at 2025-04-02T18:24:35Z by OpenModelicaOpenModelica 1.24.5 using GenerateDoc.mos