recordSCparameter
Ideal semiconductor parameters
Extends from Base.Units.NominalDataVI (Units and nominal data).
Information
The small parameters epsR and epsG are given in dimensionless units. This allows to work with deault values also in cases where the exact semiconductor data are missing. A resonable (approximate) value for Z_nom is needed for scaling.
epsR = (dV/dI)/Z_nom at I_nom Z_nom = V_nom/I_nom
Thermal losses are proportional to the forward drop voltage V, which may depend on temperature.
The temperature dependence is given by
V(T) = Vf*(1 + cT[1]*(T - T0) + cT[2]*(T - T0)^2 + ...)where Vf denotes the parameter value. With input cT empty, no temperature dependence of losses is calculated.
The switching losses are approximated by
h = hSw_nom*v*i/S_nom, S_nom = V_nom*I_nomwhere q denotes the dissipated heat per switching operation at nominal voltage and current, averaged over 'on' and 'off'.
A generalisation to powers of i and v is straightforward.
Parameters
| Type | Name | Default | Description |
|---|---|---|---|
| Real | eps | {1e-4, 1e-4} | {resistance 'on', conductance 'off'} |
| SI.Voltage | Vf | 0 | forward threshold-voltage |
| SI.Heat | Hsw_nom | 0 | switching loss at V_nom, I_nom (av on off) |
| Real | cT_loss | fill(0, 0) | {cT1,cT2,...} T-coef thermal losses |
| SI.Temp_K | T0_loss | 300 | reference T for cT_loss expansion |
| Nominal | |||
| SI.Voltage | V_nom (from NominalVI) | 1 | nom Voltage |
| SI.Current | I_nom (from NominalVI) | 1 | nom Current |