modelMni

Information

Parameters:

 Level:   MOSFET modeling level (default value = 3)
            Level=0: Static injection model
            Level=1: Shichman-Hodges model
            Level=2: Grove-Frohman model
            Level=3: Empirical model
            Level=4: Simplified Grove-Frohman model

 Tnom:    Reference temperature (default value = 300.15 K)

 VT0:     Zero-bias threshold voltage (default value = 0 Volt)
            VT0 > 0 for enhancement MOSFET
            VT0 < 0 for depletion MOSFET

 KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

 GAMMA:   Body-effect parameter (default value = Volt0.5)

 PHI:     Surface inversion potential at reference temperature (default value = 0 Volt)

 LAMBDA:  Channel length modulation  (default value = 0 1/Volt)

 TOX:     Thin oxide thickness (default value = 1e-7 m)

 COX:     Specific capacitance of SiO2 (default value = 0 F/m2)

 NSUB:    Substrate doping (default value = 0 1/m3)

 NSS:     Surface state density (default value = 0 1/m2)

 NFS:     Surface fast state density (default value = 0 1/m2)

 NEFF:    Total channel charge coefficient (default value = 1)

 XJ:      Metallurgical junction depth (default value = 0 m)

 L:       Channel length (default value = 1e-4 m)

 W:       Channel width (default value = 1e-4 m)

 LD:      Lateral diffusion (default value = 0 m)

 AD:      Drain diffusion area (default value = 0 m2)

 PD:      Drain perimeter width (default value = 0 m)

 AS:      Source diffusion area (default value = 0 m2)

 PS:      Source perimeter width (default value = 0 m)

 XD:      Depletion factor (default value = 0 m/Volt0.5)

 TPG:     Type of gate material (default value = 1)

 U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s))

 UCRIT:   Critical electric field for mobility (default value = 1e6 V/m)

 UEXP:    Exponential coefficient for mobility (default value = 0)

 UTRA:    Transverse field coefficient (default value = 0)

 VMAX:    Maximum drift velocity of carriers (default value = 0 m/s)
            VMAX = 0: Frohman-Grove model of drain current computation
            VMAX > 0: Baum-Beneking model of drain current computation

 ECRIT:   Critical electric field for pinch-off (default value = 0 V/m) Levels 2,3

 XQC:     Coefficient of channel charge share (default value = 0) Levels 2,3
            XQC <= 0.5: Ward-Dutton model of gate capacitance computation
            XQC >  0.5: Meyer model of gate capacitance computation

 DELTA:   Width effect on threshold voltage (default value = 0)

 KAPPA:   Saturation field factor (default value = 0.2)

 ETA:     Static feedback on threshold voltage (default value = 0)

 THETA:   Mobility modulation (default value = 0 1/Volt)

 VBP:     Gate to channel critical voltage (default value = 0 Volt)

 ISD:     Drain junction saturation current at reference temperature (default value = 0 Amp)

 ISS:     Source junction saturation current at reference temperature (default value = 0 Amp)

 PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

 CJ:      Zero-bias bulk capacitance per square meter at reference temperature (default value = 1e-4 F/m2)

 MJ:      Bulk junction grading coefficient (default value = 0.33)

 CJSW:    Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m)

 MJSW:    Perimeter capacitance grading coefficient (default value = 0.33)

 FC:      Forward-bias depletion capacitance coefficient (default value = 0.5)

 GminDC:  Leakage conductance (default value = 1e-12 mho)

 EG:      Energy gap for temperature effect on saturation current (default value = 1.11 Volt)

 EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

 EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)

References:

1. Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York.
2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2^nd edition, McGraw Hill, New York.

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