modelPNP

PNP transistor of the Modelica bond graph library

Information

The PNP element of the bond graph library implements the Ebers-Moll model of a PNP bipolar transistor. The substrate is not shown on the icon layer, as it is assumed grounded. The transistor is assumed to be vertically diffused, as the substrate is connected to the collector, rather than to the base.

The PNP bipolar transistor is a directed ThreePort. The direction of positive power flow is assumed out of the model at the base, B, and at the collector, C, whereas it is assumed into the model at the emitter, E.

The causality of the PNP model is relatively free. However, if there is a causality stroke placed at the collector from the outside, the substrate capacitor will assume differential causality.


Parameters:

 Bf:    Forward beta coefficient (default value = 50)

 Br:    Reverse beta coefficient (default value = 0.1)

 Is:    Transport saturation current (default value = 1e-16 Amp)

 Vak:   Inverse early voltage (default value = 0.02 /Volt)

 Tauf:  Ideal forward transit time (default value = 0.12e-9 sec)

 Taur:  Ideal reverse transit time (default value = 5e-9 sec)

 Ccs:   Collector-substrate capacitance (default value = 1e-12 F)

 Cje:   Base-emitter zero bias depletion capacitance (default value = 0.4e-12 F)

 Cjc:   Base-collector zero bias depletion capacitance (default value = 0.5e-12 F)

 Phie:  Base-emitter diffusion voltage (default value = 0.8 Volt)

 Me:    Base-emitter gradation exponent (default value = 0.4)

 Phic:  Base-collector diffusion voltage (default value = 0.8 Volt)

 Mc:    Base-collector gradation exponent (default value = 0.333)

 Gbc:   Base-collector leakage conductance (default value = 1e-15 Mho)

 Gbe:   Base-emitter leakage conductance (default value = 1e-15 Mho)

 Vt:    Thermal voltage (default value = 0.02585 Volt)

 EMin:  Minimum exponent (default value = -100)

 EMax:  Maximum exponent (default value = 40)


References:

Vlach, J. and K. Singal (1983), Computer methods for circuit analysis and design, Van Nostrand Reinhold, New York, on page 317 ff.

Parameters

TypeNameDefaultDescription
RealBf50Forward beta coefficient
RealBr0.1Reverse beta coefficient
Modelica.SIunits.CurrentIs1.e-16Transport saturation current
Modelica.SIunits.InversePotentialVak0.02Inverse early voltage
Modelica.SIunits.TimeTauf0.12e-9Ideal forward transit time
Modelica.SIunits.TimeTaur5e-9Ideal reverse transit time
Modelica.SIunits.CapacitanceCcs1e-12Collector-substrate capacitance
Modelica.SIunits.CapacitanceCje0.4e-12Base-emitter zero bias depletion capacitance
Modelica.SIunits.CapacitanceCjc0.5e-12Base-collector zero bias depletion capacitance
Modelica.SIunits.VoltagePhie0.8Base-emitter diffusion voltage
RealMe0.4Base-emitter gradation exponent
Modelica.SIunits.VoltagePhic0.8Base-collector diffusion voltage
RealMc0.333Base-collector gradation exponent
Modelica.SIunits.ConductanceGbc1e-15Base-collector leakage conductance
Modelica.SIunits.ConductanceGbe1e-15Base-emitter leakage conductance
Modelica.SIunits.VoltageVt0.02585Thermal voltage
RealEMin-100if x < EMin, the exp(x) function is linearized
RealEMax40if x > EMax, the exp(x) function is linearized

Connectors

TypeNameDefaultDescription
Interfaces.BondConBBase
Interfaces.BondConCCollector
Interfaces.BondConEEmitter

Components

TypeNameDefaultDescription
Junctions.J0p3J0p3_1
Bonds.BondB1
Bonds.BondB2
Bonds.BondB3
Bonds.BondB4
Junctions.J1p3J1p3_1
Junctions.J0p4J0p4_1
Junctions.J1p3J1p3_2
Junctions.J0p3J0p3_2
Junctions.J1p3J1p3_3
Bonds.BondB5
Bonds.BondB6
Bonds.BondB7
Passive.CC1
Bonds.eBondB8
Sources.mSfIc0
Junctions.J0p3J0p3_3
Bonds.eBondB9
Bonds.fBondB10
Sensors.DeVcb
Bonds.eBondB11
Utilities.CjDcb
Bonds.eBondB12
Junctions.J0p3J0p3_4
Bonds.eBondB13
Sources.mSfIb0
Bonds.eBondB14
Utilities.CjDeb
Utilities.IC0IC0_1
Utilities.IB0IB0_1